不同厚度GaAs通孔技术研究  

Research of the Backside Via-Hole for Different Thickness GaAs

作　　者：闫未霞 彭挺[1] 郭盼盼 强欢 莫中友 孔欣[1] YAN Weixia;PENG Ting;GUO Panpan;QIANG Huan;MO Zhongyou;KONG Xin(China ElectronicsTechnology Group Corporation No.29 Institute,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《电子与封装》2021年第11期48-52,共5页Electronics & Packaging

摘　　要：研究了不同厚度GaAs的通孔工艺,在以GaAs为衬底的加工工艺中,通孔工艺是GaAs的重要工艺,直接影响着器件的性能。阐述了目前GaAs厚度为100μm的工艺情况,分析了GaAs厚度为150μm时的深孔刻蚀。通过对刻蚀工艺中不同压强和不同偏置功率的研究,掌握GaAs深度为200μm的深孔刻蚀工艺。根据研究200μm深孔刻蚀工艺的经验,开发深度为250μm的深孔刻蚀工艺。Backside via-hole technology with different thickness GaAs is researched, backside via-hole process plays an important role in process of GaAs as the substrate, which has directly effected on the performance of the device. The backside via-hole process of GaAs with thickness of 100 μm is described. The deep via-hole etching of GaAs with thickness of 150 μm is analyzed. Through the study of different pressure and different bias power in the etching process, the deep hole etching process with the depth of 200 μm of GaAs is mastered.According to the process experience of 200 μm, deep via-hole etching process with 250 μm thickness is developed.

关 键 词：砷化镓 厚度 深孔刻蚀 偏置功率 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]