Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz  

作　　者：Quan Wang Changxi Chen Wei Li Yanbin Qin Lijuan Jiang Chun Feng Qian Wang Hongling Xiao Xiufang Chen Fengqi Liu Xiaoliang Wang Xiangang Xu Zhanguo Wang 

机构地区：[1]State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China [2]Institute of Novel Semiconductors,Shandong University,Jinan 250100,China [3]Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]Center of Materials Science and Optoelectronics Engineering and School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China [5]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China

出　　处：《Journal of Semiconductors》2021年第12期44-51,共8页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(2017YFB0402900);the Key-Area Research and Development Program of Guangdong Province(2019B010126001);the Natural Science Foundation for Distinguished Young Scholars of Shandong Province(ZR2019JQ01);the National Natural Sciences Foundation of China(62074144,52022052,62004118);Key R&D plan of Shandong Province(2019JMRH0901,2019JMRH0201);the Natural Science Foundation of Shandong Province(ZR2019BEM030,ZR2019BEM011).

摘　　要：State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of 2291.1 cm^(2)/(V·s)and two-dimensional electron gas density of 9.954×10^(12)cm^(-2)were achieved at 300 K.The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm.The f_(T)of 30.89 GHz and f_(max)of 38.71 GHz were measured on the device.Load-pull measurements were performed and analyzed under(-3.5,28)V,(-3.5,34)V and(-3.5,40)V gate/drain direct current bias in class-AB,respectively.The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56%at 8 GHz when drain biased at(-3.5,28)V.In addition,when drain biased at(-3.5,40)V,the device exhibited a saturation output power dens-ity up to 6.21 W/mm at 8 GHz,with a power gain of 11.94 dB and a power-added efficiency of 39.56%.Furthermore,the low f_(max)/f_(T)ratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed.

关 键 词：AlGaN/GaN heterostructure MOCVD HEMTS power amplifier 

分 类 号：TN386[电子电信—物理电子学]