对改性晶圆上制备的PDSOI NMOS器件热载流子效应的全面认识  

Comprehensive Understanding of Hot Carrier Effect of PDSOI NMOS Devices Fabricated on Modified Wafer

作　　者：刘春媚 杨旭 朱慧龙 胡志远[1] 毕大炜[1] 张正选[1] LIU Chunmei;YANG Xu;ZHU Huilong;HU Zhiyuan;BI Dawei;ZHANG Zhengxuan(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of the Chinese Academy of Sciences,Beijing 100049,China;Hua Tian Technology(Kunshan)Electronics Co.,Ltd.,Kunshan 215300,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能国家重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]华天科技(昆山)电子有限公司,江苏昆山215300

出　　处：《原子能科学技术》2021年第12期2157-2167,共11页Atomic Energy Science and Technology

基　　金：Supported by Jiangsu Enterprise Academician Workstation Project。

摘　　要：通过与常规器件的对比,本文详细研究了在硅离子注入改性晶圆上制备的PDSOI NMOS的热载流子诱导退化现象。理论分析和TCAD模拟结果表明,硅离子注入在埋氧层中引入的电子陷阱能够捕获注入的电子,并通过改变电场来影响氧化层的热载流子退化。在不同的应力条件下,其效果也有所不同。对改性器件施加热载流子应力时,改性器件的前栅和背栅之间存在着更明显的相互作用。同时,探讨了总剂量辐照对改性器件热载流子退化的影响。在改性器件中存在辐照增强的热载流子退化,高温退火只能部分消除这一影响。The hot carrier induced degradation of PDSOI NMOS devices fabricated on wafers modified by silicon ions implantation was elaborately studied in this paper in comparison with conventional devices. Theoretical analysis and TCAD simulation results show that the electron traps in the buried oxide layer induced by silicon ions implantation can capture the injected electrons and affect the intensity of impact ionization and hot carriers injection by altering the electric field. Meantime, the effect varies in different stress conditions. When hot carrier stress is applied to the modified device, there is a more significant interaction between the front and back gates of the modified device. The effect of total dose irradiation on the hot carrier degradation was also explored. The radiation enhanced hot carrier degradation also occurs in the modified devices and high-temperature annealing can only partially eliminate this effect.

关 键 词：热载流子效应 总剂量效应 辐射加固 PDSOI NMOS 改性器件 

分 类 号：TN386.1[电子电信—物理电子学]