不同温度辐照下栅控双极晶体管的总剂量效应参数退化研究  

Investigation of Ionization-induced Parameter Degradation in GLPNP Bipolar Transistors at Different Temperatures

作　　者：相传峰 李小龙[1] 陆妩[1,2] 王信[1] 刘默寒 于新[1] 蔡娇 张瑞勤 何承发[1] 荀明珠 刘海涛 张巍 于刚[1] 郭旗[1] XIANG Chuanfeng;LI Xiaolong;LU Wu;WANG Xin;LIU Mohan;YU Xin;CAI Jiao;ZHANG Ruiqin;HE Chengfa;XUN Mingzhu;LIU Haitao;ZHANG Wei;YU Gang;GUO Qi(Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Key Laboratory of Electronic Information Material and Device,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;School of Physical Science and Technology,Xinjiang University,Urumqi 830046,China)

机构地区：[1]中国科学院新疆理化技术研究所特殊环境功能材料与器件重点实验室,新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [2]新疆大学物理科学与技术学院,新疆乌鲁木齐830046

出　　处：《原子能科学技术》2021年第12期2183-2190,共8页Atomic Energy Science and Technology

基　　金：Supported by National Natural Science Foundation of China (11805270,12005293);West Light Foundation of Chinese Academy of Sciences(2019-XBQNXZ-B-013,2018-XBQNXZ-B-003)。

摘　　要：本文选用特殊测试结构的栅控横向PNP(gated lateral PNP,GLPNP)双极晶体管为研究对象,在不同辐照温度下,得到了温度和剂量对GLPNP双极晶体管辐射损伤的响应机制。试验结果表明,温度和剂量是影响界面陷阱电荷生成和退火动态平衡的关键因素。在低剂量阶段,高温辐照会导致GLPNP双极晶体管辐射损伤加快,在高剂量阶段,适当降低温度会促进界面陷阱电荷的生长。In this paper,the special test structure gated lateral PNP(GLPNP)bipolar transistors,irradiated in different temperatures,were selected to investigate the response mechanism of temperature and dose to radiation damage.The results show that the both of temperature and dose play primary role in determining the dynamic balance of the interface-trap buildup and annealing.Elevating temperature during irradiation can contribute to the increase of degradation at low dose level,and further decrease in temperature will enhance interface-trap buildup at high dose level.

关 键 词：温度效应 总剂量效应 界面陷阱电荷 GLPNP双极晶体管 

分 类 号：TN710[电子电信—电路与系统] TL72[核科学技术—辐射防护及环境保护]