一种具有间断场板和栅下极化层的AlGaN/GaN HEMT器件  

An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate

作　　者：李昕宇 冯全源[1] 陈飞[1] 文彦 黄进文 LI Xinyu;FENG Quanyuan;CHEN Fei;WEN Yan;HUANG Jinwen(Microelectronics Research Institute,Southwest Jiaotong University,Chendu 611756,Sichuan,China;Sichuan Miracle Power Technology Co,Ltd,Suining 629000,Sichuan,China)

机构地区：[1]西南交通大学微电子研究所,四川成都611756 [2]四川美阔电子科技有限公司,四川遂宁629000

出　　处：《微电子学与计算机》2021年第12期80-85,共6页Microelectronics & Computer

基　　金：国家自然科学基金重大项目(62090012);国家自然科学基金重点项目(62031016,61831017);四川省重点项目(2019YFG0498,2020YFG0028,2020YFG0282,2020YFG0452)。

摘　　要：为提高器件的击穿电压,提出了一种具有间断场板和栅下极化层结构的常开型AlGaN/GaN HEMT.分析了器件击穿电压提高的机理.优化了器件结构参数.结果表明,该常开型AlGaN/GaN HEMT的击穿电压从仅有单一场板时的1187V提升到了1573V.该新型结构能够保证AlGaN/GaN HEMT在高压条件下正常工作,极大地提高了器件的击穿性能.A discontinuous field plate with a polarization layer structure was proposed to improve the breakdown voltage of the depletion-mode AlGaN/GaN HEMT,and the mechanism of the increase of breakdown voltage was analyzed and explained.The breakdown voltage of the normally on AlGaN/GaN HEMT increased from 1187V when there was only a single field plate to 1573V.The new structure can ensure the normal operation of AlGaN/GaN HEMT under high voltage conditions and greatly improve the breakdown performance of the device.

关 键 词：AlGaN/GaN HEMT 场板结构 击穿电压 极化层 

分 类 号：TN304.2[电子电信—物理电子学]