GaN MMIC六位数字衰减器的设计  

Design of GaN MMIC 6 bit Digital Attenuator

作　　者：齐志华[1] 谢媛媛[1] Qi Zhihua;Xie Yuanyuan(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第12期921-925,共5页Semiconductor Technology

摘　　要：基于GaN HEMT工艺成功研制出一款宽带六位数字衰减器,衰减范围为0~31.5 dB。通过研究GaN HEMT开关器件模型及电阻式衰减网络,选取合适的衰减器拓扑,减小了衰减器的插入损耗,提高了衰减精度,缩小了芯片尺寸。测试结果表明,在2~18 GHz频带内,该衰减器的插入损耗小于4.8 dB,64态衰减精度均方根误差小于0.6 dB,输入回波损耗小于-13 dB,输出回波损耗小于-12.5 dB,附加相移为-14°~4°。在10 GHz下,其1 dB压缩点输入功率达到34.5 dBm。裸片尺寸为2.30 mm×1.10 mm。A broadband 6 bit digital attenuator with an attenuation range of 0-31.5 dB was deve-loped successfully based on GaN HEMT technology.By studying the GaN HEMT switching device model and resistance type attenuator network, and choosing appropriate attenuator topologies, the insertion loss of the attenuator was reduced, the attenuation precision was improved, and the chip size was reduced.The measurement results show that at 2-18 GHz, the insertion loss of the attenuator is less than 4.8 dB,the 64 states root-mean-square error of attenuation precision is less than 0.6 dB,the input return loss is less than-13 dB,the output return loss is less than-12.5 dB,and the additional phase shift is-14°-4°.Its input power of 1 dB compression point is as high as 34.5 dBm@10 GHz.The die size is 2.30 mm×1.10 mm.

关 键 词：GAN 高电子迁移率晶体管(HEMT) 微波单片集成电路(MMIC) 数字衰减器 宽带 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN715