原子层沉积法制备Al_(2)O_(3)薄膜研究近况和发展趋势  

The Recent Development and Future of Atomic Layer Deposition of Alumina Thin Films

作　　者：段珊珊 施昌勇[2] 杨丽珍[1] 刘忠伟[1] 张海宝[1] 陈强[1] DUAN Shan-Shan;SHI Chang-yong;YANG Li-Zhen;LIU Zhong-wei;ZHANG Hai-bao;CHEN Qiang(Lab of Plasma Physics&Materials,Beijing Institute of Graphic Communication,Beijing 102600,China;Beijing Institute of Fashion Technology,Beijing 100029,China)

机构地区：[1]北京印刷学院等离子体物理及材料研究室,北京102600 [2]北京服装学院,北京100029

出　　处：《真空》2021年第6期13-20,共8页Vacuum

摘　　要：原子层沉积(atomic layer deposition,ALD)是基于自限制界面反应的薄膜生长技术。采用原子层技术可以制备结构致密、高保形、低缺陷密度、性能优异、均匀性好的薄膜。氧化铝是原子层沉积最常见的薄膜(ALD-Al_(2)O_(3)),具有高透明度、高禁带宽度、高介电常数、高阻隔性以及良好的化学和热稳定性,因而作为钝化层、气体渗透阻隔层和栅极介电层等广泛应用于太阳能电池钝化、OLED封装、有机太阳能电池介质层、印刷电子和微电子封装等领域。本文综述了ALD-Al_(2)O_(3)原理、在线诊断和应用发展现状,主要包括氧化铝薄膜的生长机理、单体选择、沉积方法、原位诊断,同时对ALD-Al_(2)O_(3)应用以及未来的发展趋势进行预测。Atomic layer deposition(ALD)technology is a thin film growth technology based on self-limiting interfacial reaction.The atomic layer technology can prepare thin films with dense structure,high conformal,low defect density,excellent performance and great uniformity.Alumina is the most common thin film deposited by atomic layer deposition(ALD-Al_(2)O_(3)).Al_(2)O_(3)film has high transparency,high band gap width,high dielectric constant,and high barrier properties as well as good chemical and thermal stability.As a passivation layer,gas permeation barrier layer and grid dielectric layer,alumina is widely used in solar cell passivation layer,OLED packaging,organic solar cell dielectric layer,printed electronics and microelectronic device encapsulation.This article reviews the principle,online diagnosis and application development status of ALD-Al_(2)O_(3),including the growth mechanism,monomer selection,deposition method,and in-situ diagnosis of alumina film.The application and the future development trend of ALD-Al_(2)O_(3)film are predicted.

关 键 词：原子层沉积 Al_(2)O_(3)薄膜 阻隔层 钝化层 介电层 

分 类 号：TB383.2[一般工业技术—材料科学与工程]