MOS静态参数性能研究综合实验的设计与实践  

Design and Practice of Comprehensive Experiment on Static Parameter Performance of MOS

作　　者：贺媛[1] 牛立刚[1] 李昕[1] 纪永成 马健[1] 王蕊[1] HE Yuan;NIU Ligang;LI Xin;JI Yongcheng;MA Jian;WANG Rui(College of Electmic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]吉林大学电子科学与工程学院,长春130012

出　　处：《吉林大学学报（信息科学版）》2021年第6期695-699,共5页Journal of Jilin University（Information Science Edition）

基　　金：吉林大学实验技术项目基金资助项目(409020720089)。

摘　　要：以加深学生对半导体器件性能知识的理解和掌握为目的,设计并开发了适用于本科实验教学的"MOS(Matal-Oxide-Semiconductor)静态参数性能研究"综合实验项目及性能测试仪。该测试仪可以分项也可组合测量多项参数,不仅有利于加深学生对器件性能知识的理解,而且有利于学生实践动手能力的培养。多年实践教学表明,该综合实验项目有助于提高学生对本专业基础课《半导体器件物理》的学习兴趣和思考。学生在实践教学中由被动学习转变为主动实验设计者与参与者,并实现了师生互动和学生之间的交流合作,取得了良好的教学效果。In order to deepen students’understanding of semiconductor device performance,a comprehensive experimental project and performance tester of static parameters of MOS(Matal-Oxide-Semiconductor)is designed and developed according to the characteristics of undergraduate experimental teaching.This tester can measure a number of parameters either by item or by combination.It is helpful to deepen students’understanding of device performance,and is helpful to cultivate students’practical ability.Years of practice have shown that this comprehensive experimental project is helpful to improve students’learning interest and thinking of the basic course“Semiconductor Device Physics”.In teaching practice,students change from passive learning to active experimental designers and participants.It has realized the interaction between teachers and students and the cooperation between students,and achieved good teaching results.

关 键 词：微电子 半导体器件 MOS器件 静态参数 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]