溅射功率及退火处理对Ga_(2)O_(3)薄膜特性的影响  

Effect of Sputtering Power and Annealing on Ga_(2)O_(3) Thin Film Properties

作　　者：尹传磊 刘佳鑫[1,2] 赵洋 YIN Chuanlei;LIU Jiaxin;ZHAO Yang(Physics and Engineering School,Henan University of Science&Technology,Luoyang 471023,China;Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications,Henan University of Science&Technology,Luoyang 471023,China)

机构地区：[1]河南科技大学物理工程学院,河南洛阳471023 [2]河南科技大学河南省光电储能材料与应用重点实验室,河南洛阳471023

出　　处：《河南科技大学学报（自然科学版）》2022年第2期92-98,M0008,共8页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家自然科学基金项目(61674052,11404097);河南省优秀青年科学基金项目(212300410041);河南省高等学校青年骨干教师培养对象项目(2018GGJS054);河南省科技攻关项目(212102210223);河南省高等学校重点科研项目(20A140012);河南科技大学大学生研究训练计划(SRTP)项目(2020180,2020187)。

摘　　要：采用JGP-300型超高真空磁控溅射镀膜设备在蓝宝石衬底上制备了Ga_(2)O_(3)薄膜,研究了溅射功率和退火工艺对薄膜晶体结构、表面形貌和光学特性的影响。研究结果表明:当溅射功率为90 W时,Ga_(2)O_(3)薄膜的(-402)衍射峰最强,薄膜结晶质量最好。退火后Ga_(2)O_(3)薄膜的结晶度均有所加强。随着溅射功率的增加,Ga_(2)O_(3)薄膜变得均匀致密,但溅射功率过高反而影响成膜质量。Ga_(2)O_(3)薄膜吸收边在250 nm附近,在Ga_(2)O_(3)可见光区域透过率可达85%以上,且在450~500 nm处接近100%。退火处理可以进一步提高薄膜的透过率。Ga_(2)O_(3)薄膜的禁带宽度随溅射功率的提高而减小,分布在4.8~5.0 eV,且退火后禁带宽度整体减小。这表明退火处理使得大部分Ga_(2)O_(3)转化为最稳定的β相。Ga_(2)O_(3) thin films were prepared on the sapphire substrate by JGP-300 ultra-high vacuum magnetron sputtering equipment.The effects of sputtering power and annealing process on the crystal structure,surface morphology and optical properties of the films were studied.The results show that when the sputtering power is 90 W,the(-402)diffraction peak of the Ga_(2)O_(3) film is the strongest,and the film crystal quality is the best.After annealing,the crystallinity of Ga_(2)O_(3) films are enhanced.With the increase of power,the film becomes more uniform and dense,and the defects become less.But too high power will affect the quality of the films.The absorption edge of the Ga_(2)O_(3) films are around 250 nm.Its transmittance in the visible light region can reach more than 85%and close to 100%at 450~500 nm.The transmittance of the films is further improved by annealing treatment.With the increasing of the sputtering power,the band gap of the Ga_(2)O_(3) films decrease,and the distribution is between 4.8~5.0 eV.After annealing,the band gap is reduced overall.The annealing treatment makes most of the Ga_(2)O_(3) transform into the most stableβphase.

关 键 词：Ga_(2)O_(3) 磁控溅射 溅射功率 退火处理 

分 类 号：TB43[一般工业技术]