InP基长波长超辐射发光二极管的设计和制备  

Design and fabrication of InP based long wavelength superluminescent diodes

作　　者：薛正群[1,2] Xue Zhengqun(Fujian Institute of Research on the Structure of Matter,Chinese Academy of Science,Fuzhou 350002,China;FuJian Z.K.Litecore,Ltd.,Fuzhou 350002,China)

机构地区：[1]中国科学院福建物质结构研究所,福建福州350002 [2]福建中科光芯光电科技有限公司,福建福州350002

出　　处：《无线互联科技》2021年第22期17-18,共2页Wireless Internet Technology

摘　　要：文章通过设计和优化外延和芯片结构实现InP高功率掩埋结构超辐射发光二极管芯片,测试结果显示:500 mA下芯片室温出光功率达到80 mW,增益谱宽超过40 nm,覆盖范围超过1 600 nm,芯片水平和垂直发散角分别为16°和18°,芯片可用于宽带及窄线宽光源。InP high power BH-SLD is realized by designing and optimizing epitaxy and chip structure.Tested results show that:Under 500 mA,the output power of SLD reaches 80 mW at room temperature,gain spectrum width is more than 40 nm which range over 1600 nm,and the horizontal and vertical divergence angles of the chip are 16 ° and 18 ° respectively.The SLD can be used for broadband and narrow linewidth light source.

关 键 词：INP 长波长 超辐射发光二极管 高功率 宽谱宽 

分 类 号：TN312.8[电子电信—物理电子学]