基于体硅工艺的大厚度硅基垂直互联结构  

Thick Vertical Interconnect Structure Based on Bulk Silicon Process

作　　者：曾鸿江[1,2] ZENG Hong-jiang(The 38th Institute of China Electronic Technology Corporation,Hefei 230088,China;Anhui Province Engineering Laboratory for Antennas and Microwave,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088 [2]安徽省天线与微波工程实验室,安徽合肥230088

出　　处：《山东工业技术》2020年第1期84-87,共4页Journal of Shandong Industrial Technology

摘　　要：针对传统的圆柱型硅通孔(TSV)垂直互联结构的厚度薄、结构可靠性低等缺陷,本文设计了一种新型基于MEMS体硅腐蚀工艺的硅基垂直互联结构。这种新型硅基垂直互联结构具有大厚度、低成本、易于与硅基CMOS工艺兼容等优点,可运用于三维硅基微系统的封装集成技术。Traditional vertical interconnect structure of cylindrical through silicon via(TSV) has many disadvantages such as thin thickness and low reliability. In order to overcome these disadvantages, this paper designed a new type of silicon vertical interconnect structure which utilize MEMS bulk silicon etching process. This new type of silicon vertical interconnect structure has advantages of big thickness, low cost and compatible with silicon-based CMOS manufacture process, and can be applied in 3 D silicon-based system in package.

关 键 词：硅基板 垂直互联结构 体硅工艺 

分 类 号：TN305.94[电子电信—物理电子学]