物联网中的2.4GHz低功耗功率放大器设计  

Design of 2.4GHz Low Power Amplifier in Internet of Things

作　　者：赵康杰 ZHAO Kangjie(Shanghai Electric Power University,Shanghai 201306,China)

机构地区：[1]上海电力大学,上海201306

出　　处：《集成电路应用》2021年第12期10-12,共3页Application of IC

摘　　要：阐述基于Global Foundries 22FDX(22nm SOI)PDK技术,结合IoT应用的背景,设计了工作于2.4GHz的Class-E低压低功耗功率放大器。采用差分输入、单端输出的两级放大结构,该放大器在低于8mW总功耗下的输出功率范围为-16.5~4.9dBm,达到最大输出功率时PAE为41.5%。整体最大功耗7.9mW,输出匹配S22<-10dB,稳定性Kf>1,B1f>0,谐波功率<-46dBm,工作温度范围-40~125℃。Based on global foundries 22 FDX(22 nm SOI) PDK technology and the background of Io T application, a class-E low-voltage low-power amplifier working at 2.4 GHz is designed. The twostage amplifier structure with differential input and single end output is adopted. The output power range of the amplifier is-16.5~4.9 d Bm under the total power consumption of less than 8 m W, and the PAE is 41.5% when reaching the maximum output power. The overall maximum power consumption is 7.9 m W, the output matching is S22<-10 d B, the stability is KF>1, B1 F>0, the harmonic power is <-46 d Bm, and the operating temperature range is-40~125 ℃.

关 键 词：CMOS射频 功率放大器 CLASS-E 片上变压器 低功耗 

分 类 号：TP402[自动化与计算机技术] TN722.75[电子电信—电路与系统]