AZTO有源层厚度对薄膜晶体管性能的影响  

The influence of AZTO active layer thickness on the performance of thin film transistors

作　　者：胡小强 杨小天[1] 李慧 李博[1] 胡伟涛 雷明洲 HU Xiao-qiang;YANG Xiao-tian;LI Hui;LI Bo;HU Wei-tao;LEI Ming-zhou(School of Electrical and Computer,Jilin Jianzhu University,Changchun 130118,China)

机构地区：[1]吉林建筑大学电气与计算机学院长春,130118

出　　处：《吉林建筑大学学报》2021年第6期80-83,共4页Journal of Jilin Jianzhu University

摘　　要：随着信息时代的到来,各种信息类产品飞速发展,对薄膜晶体管(TFT)的性能要求也越来越高.AZTO以其优异的性能被广泛关注并且应用于薄膜晶体管的制备.本文主要研究AZTO有源层厚度对薄膜晶体管性能的影响,采用磁控溅射设备制备了不同厚度的AZTO有源层.结果表明,随着有源层厚度增加,器件开关比减小,透光率下降,AZTO有源层厚度为52.5 nm时具有最高的开关比(1×106)和最高的光学透过率(97%).With the advent of the information age,various information products have developed rapidly,and more and more requirements have been placed on the performance of thin film transistors(TFT).AZTO has been widely concerned and applied to the preparation of thin film transistors for its excellent performance.This paper mainly study the effect of AZTO active layer thickness on thin film transistor performance.Magnetron sputtering equipment is used to prepare AZTO active layers with different thicknesses.The results show that as the thickness of the active layer increases,the Ion/Ioff of the device is decreasing,and the light transmission is also declining.The AZTO active layer has the highest Ion/Ioff(1×10)and the highest transmittance(97%)when the thickness of the active layer is 52.5 nm.

关 键 词：AZTO 薄膜晶体管 有源层厚度 磁控溅射 

分 类 号：TN321.5[电子电信—物理电子学]