激光法制备ZnO半导体膜正交试验探究  

Research on Orthogonal Experiment of ZnO Semiconductor Film Prepared by Laser Method

作　　者：闫碧莹 张艳君 Yan Bi-ying;Zhang Yan-jun

机构地区：[1]乌海职业技术学院,内蒙古乌海010070

出　　处：《化工设计通讯》2022年第1期117-119,122,共4页Chemical Engineering Design Communications

基　　金：内蒙古自治区教育厅自然科学项目(NJZC17576)。

摘　　要：应用脉冲激光沉积法(PLD)制备ZnO基稀磁半导体薄膜,主要研究各试验条件对薄膜结晶效果的影响,通过正交试验确定最佳试验条件为:衬底温度500℃,氧压0.1Pa,激光能量200mJ/次,为ZnO薄膜的深加工和进一步开发利用奠定基础。The pulsed laser deposition(PLD)method is used to prepare ZnO-based diluted magnetic semiconductor films.The main research is to study the influence of various experimental conditions on the crystallization effect of the film.The best experimental conditions are determined by orthogonal experiments:substrate temperature 500℃,oxygen pressure 0.1Pa,laser energy 200mJ·times^(-1),lays the foundation for the deep processing and further development and utilization of ZnO thin films.

关 键 词：氧化锌 稀磁半导体 脉冲激光沉积法 

分 类 号：TB383.2-18[一般工业技术—材料科学与工程]