焦磷酸钾和双氧水对化学机械抛光中铜/钴电偶腐蚀及去除速率的影响  

Effects of potassium pyrophosphate and hydrogen peroxide on galvanic corrosion between copper and cobalt and their removal rates during chemical mechanical polishing

作　　者：李浩然 张保国 李烨 阳小帆 杨朝霞 LI Haoran;ZHANG Baoguo;LI Ye;YANG Xiaofan;YANG Zhaoxia(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《电镀与涂饰》2022年第1期67-71,共5页Electroplating & Finishing

摘　　要：通过电化学测试和化学机械抛光(CMP)试验研究了pH=10的抛光液中焦磷酸钾和双氧水的质量分数对Cu/Co电偶腐蚀的影响。结果表明,适量K_(4)P_(2)O_(7)和H_(2)O_(2)的存在能够有效减小Cu与Co之间的腐蚀电位差,最小可降至11 mV。采用由0.3%H_(2)O_(2)、0.1%K_(4)P_(2)O_(7)和2%硅溶胶组成的抛光液进行化学机械抛光时,Cu、Co的去除速率分别为312.0Å/min和475.6Å/min。The effects of mass fractions of K_(4)P_(2)O_(7) and H_(2)O_(2) in a slurry(pH=10)on galvanic corrosion between Cu and Co were studied by electrochemical measurement and chemical mechanical polishing(CMP)test.The results showed that the corrosion potential difference between Cu and Co could be effectively decreased to 11 mV by adding suitable amounts of K_(4)P_(2)O_(7) and H_(2)O_(2) to the slurry.When CMP in a slurry comprising H_(2)O_(2)0.3%,K_(4)P_(2)O_(7)0.1%,and silica sol 2%,the removal rates of Cu and Co were 312.0Å/min and 475.6Å/min,respectively.

关 键 词：铜 钴 电偶腐蚀 化学机械抛光 焦磷酸钾 双氧水 去除速率 

分 类 号：TG175[金属学及工艺—金属表面处理] TG356.28[金属学及工艺—金属学]