SiC MOSFET功率器件标准研究  

Study on Standard for SiC MOSFET Power Device

作　　者：高伟 赵璐冰 GAO Wei;ZHAO Lu-bing(China Advanced Semiconductor Industry Innovation Alliance)

机构地区：[1]第三代半导体产业技术创新战略联盟

出　　处：《标准科学》2021年第12期79-84,共6页Standard Science

摘　　要：本文结合SiC MOSFET国际标准进展,分析了阈值电压漂移、偏压温度不稳定性、体二极管退化测试标准的制定难点;同时,根据国内外产业发展现状、我国技术标准进展,分析了测试设备精度、新型封装、动态可靠性等关键问题与标准制定面临的挑战,并提出了首先定位团体标准制定的工作机制,以期以技术标准的研制支撑产业的市场化发展。Combined with the progress of international standard of SiC MOSFET, this paper analyzes the difficulties in the development of testing standard on threshold voltage drift, bias temperature instability and bulk diode degradation.At the same time, according to the current situation of industrial development at home and abroad and the progress of technical standards in China, the key problems and challenges faced by standard development such as test equipment accuracy, new packaging and dynamic reliability are analyzed, and the working mechanism of association standard development firstly is proposed, in order to support the market-oriented development of the industry with the development of technical standards.

关 键 词：SiC MOSFET 碳化硅 功率开关器件 团体标准 第三代半导体 

分 类 号：TN386[电子电信—物理电子学]