10μm间距红外探测器铟柱制备研究  

Study of Indium Bump Fabrication for Infrared Detector with 10μm Pitch

作　　者：马涛 谢珩[1] 刘明[1] 宁提[1] 谭振[1] MA Tao;XIE Heng;LIU Ming;NING Ti;TAN Zhen(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2022年第1期6-10,共5页Infrared

摘　　要：小间距红外探测器目前已成为红外探测器技术发展的一个重要方向。用于连接探测器芯片与读出电路芯片的铟柱的制备工艺水平成为影响器件性能的一个重要因素。介绍了一种10μm间距红外探测器铟柱的制备工艺。新工艺采用多次铟柱生长结合离子刻蚀的手段,最终剥离和制备出高度为8μm、非均匀性小于5%的10μm间距红外探测器读出电路铟柱,解决了用传统工艺制备小间距铟柱时高度不够的问题。该工艺的优势是无需进行两芯片端的铟柱制备,简化了工艺流程,为以后更小间距红外探测器铟柱的制备提供了思路。Small-pitch infrared detectors have become an important direction in the development of infrared detector technology.The preparation process level of indium bump, which connects the detector chip and the readout circuit chip, has become an important factor affecting the performance.The fabrication process of indium bump for infrared detectors with 10 μm pitch is introduced.The new process uses multiple indium film growth combined with ion-etching methods,finally prepares a 10μm-pitch indium bump for infrared detector readout circuit(ROIC) with a height of 8 μm and a non-uniformity of less than 5 %,which solves the problem of insufficient height when small-pitch indium bump is fabricated by the conventional process.The advantage is that there is no need to prepare the indium bump on the two chip ends,which simplifies the process.The result provides an idea for the preparation of indium bumps for smaller pitch infrared detectors in the future.

关 键 词：铟柱 离子刻蚀 10μm间距 红外探测器 

分 类 号：TN214[电子电信—物理电子学]