磷化铟高电子迁移率晶体管外延结构材料抗电子辐照加固设计  

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

作　　者：周书星 方仁凤 魏彦锋 陈传亮 曹文彧 张欣 艾立鹍[2] 李豫东[3] 郭旗[3] Zhou Shu-Xing;Fang Ren-Feng;Wei Yan-Feng;Chen Chuan-Liang;Cao Wen-Yu;Zhang Xin;Ai Li-Kun;Li Yu-Dong;Guo Qi(Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,School of Physics and Electronic Engineering,Hubei University of Arts and Science,Xiangyang 441053,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;CAS Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China)

机构地区：[1]湖北文理学院物理与电子工程学院,低维光电材料与器件湖北省重点实验室,襄阳441053 [2]中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 [3]中国科学院新疆理化技术研究所,中国科学院特殊环境功能材料与器件重点实验室,乌鲁木齐830011

出　　处：《物理学报》2022年第3期284-291,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11705277,61434006);湖北文理学院博士科研启动基金(批准号:kyqdf2059038)资助的课题.

摘　　要：为研究磷化铟高电子迁移率晶体管(InP HEMT)外延结构材料的抗电子辐照加固设计的效果,本文采用气态源分子束外延法制备了系列InP HEMT外延结构材料.针对不同外延结构材料开展了1.5 MeV电子束辐照试验,在辐照注量为2×10^(15)cm^(-2)条件下,并测试了InP HEMT外延结构材料二维电子气辐照前后的电学特性,获得了辐照前后不同外延结构InP HEMT材料二维电子气归一化浓度和电子迁移率随外延参数的变化规律,分析了InP HEMT二维电子气辐射损伤与Si-δ掺杂浓度、InGaAs沟道厚度和沟道In组分以及隔离层厚度等结构参数的关系.结果表明:Si-δ掺杂浓度越大,隔离层厚度较薄,InGaAs沟道厚度较大,沟道In组分低的InP HEMT外延结构二维电子气辐射损伤相对较低,具有更强的抗电子辐照能力.经分析原因如下:1)电子束与材料晶格发生能量传递,破坏晶格完整性,且在沟道异质界面引入辐射诱导缺陷,增加复合中心密度,散射增强导致二维电子气迁移率和浓度降低;2)高浓度Si-δ掺杂和薄隔离层有利于提高量子阱二维电子气浓度,降低二维电子气受辐射损伤的影响;3)高In组分应变沟道有利于提高二维电子气迁移率,但辐照后更容易应变弛豫产生位错缺陷,导致二维电子气迁移率显著下降.In order to improve the radiation-resistance ability of the InP based high electron mobility transistor(InP HEMT)by optimizing the epitaxial structure design,a series of InP HEMT epitaxial structure materials with different structure parameters is grown by gas source molecular beam epitaxy.These samples are irradiated at room temperature by a 1.5-MeV electron beam at the same irradiation fluence of 2×10^(15)cm^(-2).The electrical properties of the two-dimensional electron gas(2DEG)for InP HEMT epitaxial materials before and after irradiation are measured by Hall measurements to obtain the changes of the normalized 2DEG density and electron mobility along with the epitaxial structure parameters.The relation between 2DEG radiation damage and epitaxial structure parameters(such as Si-δ-doping density,spacer thickness,channel thickness and channel In content)of InP HEMT epitaxial structure materials is analyzed.The results show that the 2DEG of the InP HEMT epitaxial structure material with higher Si-δ-doping density,thinner spacer thickness,thicker channel thickness and lower channel In content has lower radiation damage,which possesses the stronger radiation-resistance ability.

关 键 词：磷化铟高电子迁移率晶体管 二维电子气 电子束辐照 辐射加固 

分 类 号：TN386[电子电信—物理电子学]