DPSA双极器件中的1/f噪声特性研究  

Study on 1/f Noise Characteristics in DPSA Bipolar Transistors

作　　者：邱盛[1] 夏世琴 邓丽 张培健[2] QIU Sheng;XIA Shiqin;DENG Li;ZHANG Peijian(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China;National Laboratory of Science and Technology on Analog Integrated Circuit,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路国家级重点实验室,重庆400060

出　　处：《微电子学》2021年第6期929-932,共4页Microelectronics

基　　金：模拟集成电路国家级重点实验室基金资助项目(9140A11050315DZ34052)。

摘　　要：在现代高性能模拟集成电路设计中,噪声水平是影响电路性能的关键因素之一。研究了双多晶自对准高速互补双极NPN器件中发射极结构对器件直流和低频噪声性能的影响。实验结果表明,多晶硅发射极与单晶硅界面超薄氧化层以及发射极几何结构是影响多晶硅发射极双极器件噪声性能的主要因素。In modern high performance analog integrated circuits, 1/f noise is one of the key issues affect the circuit performance. The effects of emitter structure on DC and low frequency noise characteristics in double polysilicon self-aligned high speed complementary NPN bipolar transistors was studied. It was demonstrated that the interfacial oxide layer between polysilicon emitter and monocrystalline silicon and the emitter geometry were the major factors which greatly affect the 1/f noise characteristics.

关 键 词：1/f噪声 双极器件 界面氧化层 

分 类 号：TN431[电子电信—微电子学与固体电子学] TN406