抛光液中各组分对Co CMP性能的影响  

Effect of Different Components in Polishing Slurry on Properties of Cobalt CMP

作　　者：冯子璇 崔浩祥 杨程辉 孙晓琴 牛新环 Feng Zixuan;Cui Haoxiang;Yang Chenghui;Sun Xiaoqin;Niu Xinhuan(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2022年第1期37-41,76,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金资助项目(F2021202009)。

摘　　要：钴(Co)的化学机械抛光(CMP)要求有较高的去除速率(大于100 nm/min)和洁净平整的表面。采用新型弱碱性抛光液,研究不同成分(如过氧化氢(H_(2)O_(2))、1,2,4-三氮唑(TAZ)、异辛醇聚氧乙烯醚(JFCE))对Co CMP性能的影响。结果表明,抛光液中H_(2)O_(2)体积分数为0.4%、pH值为8、甘氨酸(GLY)浓度为0.266 mol/L时,Co的去除速率最大,为763.53 nm/min。为了缓解Co表面的化学腐蚀,加入0.022 mol/L的TAZ作为抑制剂和体积分数为1.3%的JFCE作为表面活性剂后,Co的去除速率得到有效抑制,为489.74 nm/min。对抛光前后的Co表面进行原子力显微镜(AFM)测试,结果表明,Co表面湿润性增加,表面粗糙度明显下降。研究结果对Co布线的工业应用具有一定的指导意义。Chemical mechanical polishing(CMP)of cobalt(Co)requires a high removal rate(>100 nm/min)and a clean and smooth surface.The effects of different components,such as H_(2)O_(2),1,2,4-triazole(TAZ)and isooctyl alcohol polyoxyethylene ether(JFCE)on properties of Co CMP were studied by using a new type weak alkaline slurry.The results show that Co has the highest removal rate of 763.53 nm/min when the volume fraction of H_(2)O_(2)is 0.4%,pH value is 8,and the concentration of glycine(GLY)is 0.266 mol/L in the slurry.In order to alleviate the chemical corrosion of Co surface,0.022 mol/L TAZ as the inhibitor and 1.3% volumn fraction of JFCE as the surfactant were added in the slurry,and the removal rate of Co was effectively inhibited,which was 489.74 nm/min.Atomic force microscope(AFM)was used to test Co surface before and after polishing.The results show that the wettability of Co surface is improved and the surface roughness is reduced significantly.The results has certain guiding significance to the industrial application of Co interconnection.

关 键 词：化学机械抛光(CMP) 钴(Co) 去除速率 表面粗糙度 抛光液 

分 类 号：TN305.2[电子电信—物理电子学]