GaAs/AlN异构集成太赫兹倍频器芯片  

GaAs/AlN Heterogeneous Integration Terahertz Frequency Multiplier Chip

作　　者：田爱华[1,2] 邢东 赵向阳[2] 蒋长宏[3] 刘波[1,2] 冯志红 Tian Aihua;Xing Dong;Zhao Xiangyang;Jiang Changhong;Liu Bo;Feng Zhihong(Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China;The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;National Space Science Center,Chinese Academy of Science,Beijing 100089,China)

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]中国科学院国家空间科学中心,北京100089

出　　处：《半导体技术》2022年第1期60-64,共5页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2018YFF0109701)。

摘　　要：针对太赫兹GaAs肖特基二极管倍频器芯片散热能力差导致输出功率低的问题,开展了GaAs/AlN异构集成太赫兹倍频器芯片研究。通过稳态热仿真发现,将肖特基二极管芯片衬底由GaAs替换为热导率更高的AlN可以降低结温。对芯片衬底替换工艺开展了研究,获得了GaAs/AlN异构集成太赫兹二极管。分别对基于GaAs衬底二极管和基于GaAs/AlN异构集成二极管的162 GHz倍频器开展功率性能测试对比。测试结果表明:装配GaAs衬底二极管的倍频器输入功率为200 mW时,输出功率最高为43.6 mW;而装配GaAs/AlN异构集成二极管的倍频器输入功率提高到316 mW,输出功率为72.4 mW。肖特基二极管由GaAs衬底替换为AlN衬底后耐受功率(输入功率)提高了约58%,倍频效率由21.8%提升至22.9%,输出功率也相应提升,验证了相比GaAs衬底肖特基二极管,GaAs/AlN异构集成太赫兹二极管的散热性能及耐受功率具有明显的优越性。In order to solve the problem of low output power caused by poor heat dissipation capability of terahertz GaAs Schottky diode frequency multiplier chip,GaAs/AlN heterogeneous integration terahertz frequency multiplier chip was researched.According to steady state thermal simulation results,Schottky diode chip shows lower junction temperature when its GaAs substrate is replaced by AlN substrate which has higher thermal conductivity.Then substrate replacement process was researched,and GaAs/AlN heterogeneous integration terahertz diode was obtained.The power performances of 162 GHz frequency multipliers based on GaAs substrate diode and GaAs/AlN heteroge-neous integration diode were measured and compared.Measured maximum output power of the frequency multiplier with GaAs substrate diode is 43.6 mW at 200 mW input power,and which with GaAs/AlN heterogeneous integration diode is 72.4 mW at 316 mW input power.After replacing the Schottky diode with an AlN substrate from a GaAs substrate,the withstand power(input power)improves by about 58%,the multiplying efficiency increases from 21.8% to 22.9%,and the output power increases accor-dingly,which verifying that GaAs/AlN heterogeneous integration terahertz diode has obvious superiority in heat dissipation capability and withstand power than GaAs substrate Shottky diode.

关 键 词：太赫兹 异构集成 肖特基二极管 热分析 倍频器 

分 类 号：TN771[电子电信—电路与系统]