有机介质薄膜-陶瓷异构集成互连技术  被引量:2

Heterogeneous Integrated Interconnection Technology for Organic Dielectric Thin Film and Ceramic

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作  者:杨鑫 刘英坤[1] 张鹤 张崤君[1] 杨欢 高岭[1] Yang Xin;Liu Yingkun;Zhang He;Zhang Xiaojun;Yang Huan;Gao Ling(The 13^(th)Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051

出  处:《微纳电子技术》2022年第1期99-106,共8页Micronanoelectronic Technology

摘  要:介绍了有机介质薄膜-陶瓷异构集成互连技术发展概况,基于陶瓷基板、有机介质薄膜和金属化布线及互连制备工艺,详细阐述了有机介质薄膜-陶瓷异构集成互连中的四种关键技术:陶瓷基板收缩率控制、陶瓷基板表面处理、有机介质薄膜制备和金属化布线及互连。陶瓷基板收缩率控制是通过改善陶瓷基板制备工艺,实现了对陶瓷基板通孔位置的控制,进而使陶瓷基板更好地与薄膜工艺相匹配;陶瓷基板表面处理是利用化学机械抛光(CMP)处理陶瓷基板表面,使基板表面粗糙度和平整度满足有机介质薄膜工艺需求,实现了在陶瓷基板上兼容有机介质薄膜;有机介质薄膜由低介电常数的有机高分子聚合物通过旋涂和烘焙而成,再通过多次薄膜工艺实现了多层有机介质薄膜的制备;金属化布线及互连利用物理气相沉积(PVD)技术制备粘附层金属和导电层金属,实现了介质层金属化布线和层间金属化互连。最后展望了有机介质薄膜-陶瓷异构集成互连技术的发展趋势。The development of organic dielectric thin film and ceramic heterogeneous integrated interconnection technology is introduced.Based on the preparation technologies of ceramic substrate,organic dielectric thin film,metallization pattern and interconnection,four key techno-logies of organic dielectric thin film and ceramic heterogeneous integrated interconnection,including the shrinkage percentage control of ceramic substrate,the surface treatment of ceramic substrate,preparation of organic dielectric layer thin film,metallization pattern and interconnection,are introduced in detail.The shrinkage percentage control of ceramic substrate is achieved by improving the preparation process of the ceramic substrate to realize the control of the position of the through ceramic via of the substrate,thereby making the ceramic substrate better match the organic dielectric thin film process.The surface treatment of ceramic substrate is to use chemical mechanical polishing(CMP)to treat the surface of the ceramic substrate,so that the substrate surface roughness and flatness meet the requirements of the organic dielectric thin film process,and realize the compatibility of organic dielectric thin films on the ceramic substrate.The organic dielectric thin film is formed by spin-coating and baking low-dielectric constant organic polymers,and the preparation of the multilayer organic dielectric thin film is realized through repetition thin film processes.Metallization pattern and interconnection use physical vapor deposition(PVD)technology to prepare adhesion layer metal and conductive layer metal,and the dielectric layer metallization pattern and inter-layer metallization interconnection are realized.Finally,the development trend of the organic dielectric thin film and ceramic heterogeneous integrated interconnection technology is prospected.

关 键 词:异构集成 陶瓷基板 有机介质薄膜 异构互连 表面处理 金属化布线及互连 

分 类 号:TN405.97[电子电信—微电子学与固体电子学] TN44

 

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