SiC MOSFET栅极驱动电路研究综述  

Review of SiC MOSFET Gate Drivers

作　　者：周泽坤[1] 曹建文[1] 张志坚 张波[1] ZHOU Zekun;CAO Jianwen;ZHANG Zhijian;ZHANG Bo(Power Integrated Technology Laboratory,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学功率集成技术实验室,成都610054

出　　处：《电子与封装》2022年第2期1-11,共11页Electronics & Packaging

基　　金：国家自然科学基金(62074028)。

摘　　要：凭借碳化硅(SiC)材料的宽禁带、高击穿电场、高电子饱和速率和高导热性等优点,SiC MOSFET广泛应用在高压、高频等大功率场合。传统基于硅(Si)MOSFET的驱动电路无法完全发挥SiC MOSFET的优异性能,针对SiC MOSFET的应用有必要采用合适的栅驱动设计技术。目前,已经有很多学者在该领域中有一定的研究基础,为SiC MOSFET驱动电路的设计提供了参考。对现有基于SiC MOSFET的PCB板级设计技术进行了详细说明,并从开关速度、电磁干扰噪声以及能量损耗等方面对其进行了总结和分析,给出了针对SiC MOSFET驱动电路的设计考虑和建议。Since Silicon carbide(SiC)material has the advantages of wide band gap,high breakdown electric field,high electron saturation rate and high thermal conductivity,SiC MOSFET is widely used in high-power occasions such as high voltage and high frequency.However,the conventional gate drivers for silicon(Si)MOSFET cannot completely exhibit the excellent performance of SiC MOSFET.Therefore,it is very necessary to use appropriate gate driver design techniques for SiC MOSFET.Currently,many scholars have proposed some research results in this field,which provide the reference for designs of SiC MOSFET driving circuit.Current gate driver design techniques are reviewed.Furthermore,these design techniques are summarized and analyzed from switching speed,electro-magnetic interference noise,and energy loss.The design considerations and suggestions of SiC MOSFET gate drivers are given.

关 键 词：电磁干扰噪声 能量损耗 栅驱动 SiC MOSFET 

分 类 号：TN433[电子电信—微电子学与固体电子学]