用于GaN HEMT栅驱动芯片的快速响应LDO电路  

Fast-Transient LDO Circuit for GaN HEMT Gate Driving Circuit

作　　者：陈恒江 周德金 何宁业 汪礼 陈珍海 CHEN Hengjiang;ZHOU Dejin;HE Ningye;WANG Li;CHEN Zhenhai(Wuxi I-CoreElectronicsCo.,Ltd.,Wuxi 214072,China;School of Microelectronics,Fudan University,Shanghai 200443,China;Wuxi Research Institute of Applied Technologies,Tsinghua University,Wuxi 214072,China;Engineering Technology Research Center of Intelligent Microsystems of AnHui Province,Huangshan University,Huangshan 245041,China)

机构地区：[1]无锡中微爱芯电子有限公司,江苏无锡214072 [2]复旦大学微电子学院,上海200443 [3]清华大学无锡应用技术研究院,江苏无锡214072 [4]黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041

出　　处：《电子与封装》2022年第2期50-53,共4页Electronics & Packaging

基　　金：安徽省重点研究与开发计划(201904b11020007);安徽省高校自然科学研究项目(KJHS2020B07)。

摘　　要：设计了一种用于GaN高电子迁移率晶体管(High-Electron-Mobility Transistor,HEMT)器件栅驱动芯片的快速响应低压差线性稳压器(Low Dropout Regulator,LDO)电路,可为高速变化的数字电路提供快速响应的供电电压。该电路采用动态偏置结构,通过在大负载发生时给误差放大器增加一个额外的动态偏置结构,来加快输出端的瞬态响应速度。基于0.18μm BCD工艺,完成了电路设计验证。仿真结果显示LDO瞬态响应时间小于0.5μs,可满足频率达1 MHz的GaN HEMT器件栅驱动芯片应用要求。A fast response low dropout regulator(LDO)circuit for GaN high-electron-mobility transistor(HEMT)device gate driver chip is designed,which can provide fast response power supply voltage for high-speed digital circuits.The circuit adopts dynamic bias technique,which can increase the transient response of the output terminal by adding an additional dynamic offset structure to the error amplifier when heavy load occurs.The circuit is designed and verified on the 0.18μm BCD process.The simulation results show that the transient response time of LDO is less than 0.5μs,which can meet the requirements of GaN HEMT device gate driver with the switching frequency over 1 MHz.

关 键 词：高电子迁移率晶体管 栅驱动 低压差线性稳压器 快速响应 

分 类 号：TN402[电子电信—微电子学与固体电子学]