一种抗辐射LVDS驱动电路IP设计  

IP Design of Anti-Radiation LVDS Driving Circuit

作　　者：马艺珂 汪逸垚 姚进 花正勇 殷亚楠 周昕杰 颜元凯 MA Yike;WANG Yiyao;YAO Jin;HUA Zhengyong;YIN Ya'nan;ZHOU Xinjie;YAN Yuankai(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214072

出　　处：《电子与封装》2022年第2期67-71,共5页Electronics & Packaging

基　　金：抗辐射应用技术创新中心创新基金(KFZC2021010202)。

摘　　要：低压差分信号(Low Voltage Differential Signaling,LVDS)在航天通讯领域有着广泛的应用,为解决LVDS驱动器电路在宇宙辐射环境中的单粒子闩锁和总剂量问题,给出了低成本抗辐射解决方案,提出了一种改进结构的抗辐射加固技术,不仅解决了现有工艺下带隙基准电路的温漂问题,而且还可以利用设计的抗辐射单元库来满足抗辐射加固要求,简化了电路设计。基于0.18μm CMOS工艺模型库,利用Hspice进行仿真,该电路传输速率达到400 Mb/s,具有抗单粒子特性,满足航空航天领域对抗辐射LVDS驱动电路的使用要求。Low-voltage differential signals(LVDS)are widely used in the field of aerospace communication.In order to solve the single-event latch-up and total dose problems of the LVDS driver circuit in the cosmic radiation environment,a low-cost anti-radiation solution is provided,and an improved structure and anti-radiation solution are proposed.The radiation hardening technology not only can solve the temperature drift problem of the band gap reference circuit under the existing technology,but also can use the designed anti-radiation unit library to meet the anti-radiation hardening requirements,simplifying the circuit design.Based on the 0.18μm CMOS process model library and simulated by Hspice,the circuit has a transmission rate of 400 Mb/s,and has anti-single event characteristics,which meets the requirements of radiation-resistant LVDS drive circuits in the aerospace field requirements.

关 键 词：LVDS 驱动器电路 单粒子闩锁 总剂量 抗辐射加固 温漂问题 

分 类 号：TN402[电子电信—微电子学与固体电子学]