氢退火工艺对非晶硅光学性能的影响  

Effect of Hydrogen Annealing Process on Optical Properties of Amorphous Silicon

作　　者：曾璞[1] 罗杰平 刘从吉[1] 罗丹 袁菲[1] 罗辉[1] 王兴伦 王路 钱煜[1] 关晟 ZENG Pu;LUO Jieping;LIU Congji;LUO Dan;YUAN Fei;LUO Hui;WANG Xinglun;WANG Lu;QIAN Yu;GUAN Sheng(Southwest Institute of Technical Physics,Sichuan 610041,China;Sichuan Airlines Co.,Ltd.,Sichuan 610225,China)

机构地区：[1]西南技术物理研究所,四川610041 [2]四川航空股份有限公司,四川610225

出　　处：《集成电路应用》2022年第1期43-45,共3页Application of IC

摘　　要：阐述利用等离子化学气相沉积制备了非晶硅材料,然后在不同浓度的氢气气氛下进行了等离子退火处理,并对其折射率,消光系数和傅立叶红外吸收谱进行了测试分析。结果显示,不同浓度的氢气氛等离子退火处理对非晶硅材料的光学性能有影响。Amorphous silicon is prepared by PECVD method, then were annealed in different density of hydrogen atmospheres. Refractive index,extinction coefficient and FTIR spectrum were measured. The research demonstrates that the optical properties of amorphous silicon can be changed by annealed in different density of hydrogen atmospheres.

关 键 词：非晶硅 等离子化学气相沉积 退火 折射率 消光系数 傅立叶红外吸收谱 

分 类 号：TN321.5[电子电信—物理电子学] TN305