改善硅外延片电阻率和厚度一致性分析  

Analysis of Improving Consistency of Resistivity and Thickness of Silicon Epitaxial Wafer

作　　者：张晓博 ZHANG Xiaobo(Hebei Puxing Electronic Technology Co.,Ltd.,Hebei 050200,China)

机构地区：[1]河北普兴电子科技股份有限公司,河北050200

出　　处：《集成电路应用》2022年第1期54-55,共2页Application of IC

摘　　要：阐述硅外延片在电阻率和厚度一致性的问题,改善其一致性外延片的制备方法,包括装入衬底片、衬底气相抛光、变流量吹扫、本征生长、外延生长的工艺流程和工艺参数。This paper expounds the problem of consistency of resistivity and thickness of silicon epitaxial wafer, and improves the preparation method of consistent epitaxial wafer, including the process flow and process parameters of loading substrate wafer, substrate vapor polishing, variable flow purging, intrinsic growth and epitaxial growth.

关 键 词：硅外延片 一致性 电阻率 

分 类 号：TN304.054[电子电信—物理电子学] TN405