ZnO及Ag/ZnO纳米薄膜的制备及电学性质研究  

The Research on Preparation and Electrical Properties of ZnO and Ag/ZnO Nano Films

作　　者：王梦琪 刘晓彤 姚成宝[1] 物利娟 Wang Mengqi;Liu Xiaotong;Yao Chengbao;Wu Lijuan(Harbin Normal University;Harbin Hulan No.1 High School)

机构地区：[1]哈尔滨师范大学 [2]哈尔滨市呼兰第一中学校

出　　处：《哈尔滨师范大学自然科学学报》2021年第6期65-70,共6页Natural Science Journal of Harbin Normal University

摘　　要：利用磁控溅射技术制备了ZnO纳米薄膜(ZnO NFm)和Ag复合ZnO纳米薄膜(Ag/ZnO NFm),并对其表面形貌、微观结构、组分和电学性能进行了研究.结果表明,Ag/ZnO纳米薄膜中大多数Ag以Ag_(x)O_(y)或合金的形式存在,由于Ag替位ZnO中的Zn^(2+)造成了衍射角的偏移.同时,ZnO纳米薄膜、Ag/ZnO纳米薄膜呈现出沿C轴择优生长特点.Ag的复合使得ZnO纳米薄膜的霍尔迁移率由160 cm^(2)·V^(-1)·S^(-1)增加至673 cm^(2)·V^(-1)·S^(-1)、电阻率由2.329×10^(-4)Ω·cm减小为1.018×10^(-4)Ω·cm、载流子浓度由1.68×10^(20)降低为+9.12×10^(19) cm^(-3).可见,Ag/ZnO复合纳米薄膜在构建多功能电学器件领域中具有很好的应用前景.ZnO nano-films(ZnO NFm) and Ag composite ZnO nano-films(Ag/ZnO NFm) were prepared using magnetron sputtering technology,and their surface morphology,microstructure,composition,and electrical properties were studied.The results show that most of the Ag in Ag/ZnO nano-films exist in the form of Ag_(x)O_(y) or alloys.The displacement of Zn^(2+) in ZnO by Ag causes the shift of the diffraction angle.At the same time,the ZnO nano-films and Ag/ZnO nano-films are preferentially growing along the C axis.The recombination of Ag increases the Hall mobility of ZnO nanofilm from 160 cm^(2)·V^(-1)·S^(-1) to 673 cm^(2)·V^(-1)·S^(-1),the resistivity decreases from 2.329×10^(-4) Ω·cm to 1.018×10^(-4) Ω·cm,and the carrier concentration decreases from 1.680×10^(20) to +9.117×10^(19) cm^(-3).It can be seen that Ag/ZnO composite nanofilms have a good application prospect in the field of constructing multifunctional electrical devices.

关 键 词：磁控溅射 Ag/ZnO 纳米复合薄膜 电学性质 

分 类 号：O472.3[理学—半导体物理]