复合漏电模型建立及阶梯场板GaN肖特基势垒二极管设计  

Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate

作　　者：刘成[1] 李明[1] 文章 顾钊源 杨明超 刘卫华[1] 韩传余 张勇[2] 耿莉[1] 郝跃[3] Liu Cheng;Li Ming;Wen Zhang;Gu Zhao-Yuan;Yang Ming-Chao;Liu Wei-Hua;Han Chuan-Yu;Zhang Yong;Geng Li;Hao Yue(The Key Lab of Micro-nano Electronics and System Integration of Xi’an City,School of Microelectronics,Xi’an Jiaotong University,Xi’an 710049,China;School of Electrical Engineering,Xi'an Jiaotong University,Xi’an 710049,China;School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]西安交通大学微电子学院,西安市微纳电子与系统集成实验室,西安710049 [2]西安交通大学电气工程学院,西安710049 [3]西安电子科技大学微电子学院,西安710071

出　　处：《物理学报》2022年第5期274-282,共9页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2017YFB0404102)资助的课题。

摘　　要：准垂直GaN肖特基势垒二极管(SBD)因其低成本和高电流传输能力而备受关注.但其主要问题在于无法很好地估计器件的反向特性,从而影响二极管的设计.本文考虑了GaN材料的缺陷以及多种漏电机制,建立了复合漏电模型,对准垂直Ga N SBD的特性进行了模拟,仿真结果与实验结果吻合.基于此所提模型设计出具有高击穿电压的阶梯型场板结构准垂直GaN SBD.根据漏电流、温度和电场在反向电压下的相关性,分析了漏电机制和器件耐压特性,设计的阶梯型场板结构准垂直GaN SBD的Baliga优值BFOM达到73.81 MW/cm^(2).Quasi-vertical GaN barrier Schottky diodes have attracted much attention due to their low cost and high current transfer capability.The main problem is that the reverse characteristics of the devices may not be well estimated,which affects the design of the diodes.In this paper,the defects of GaN materials and the leakage related tunneling mechanisms accompanied with other mechanisms are considered.Based on the established composite device models,the reverse leakage current is simulated which is well consistent with the recent experimental result.With the assistance of the proposed models,several field plate structures are discussed and simulated to obtain a quasi-vertical GaN barrier Schottky diode with high breakdown voltage.The major leakage mechanisms are also analyzed according to the relation among leakage current,temperature and electric field at various reverse voltages.High BFOM up to 73.81 MW/cm^(2) is achieved by adopting the proposed stepped field plate structure.

关 键 词：GaN肖特基二极管 漏电流 击穿电压 阶梯型场板 

分 类 号：TN311.7[电子电信—物理电子学]