α籽晶促进低温反应溅射沉积α-Al_(2)O_(3)薄膜  

Promotion Effect ofα-Al_(2)O_(3) Seeds on Low-temperature Deposition ofα-Al2O 3 Films by Reactive Sputtering

作　　者：李修贤 邱万奇[1] 焦东玲[1] 钟喜春[1] 刘仲武[1] LI Xiuxian;QIU Wanqi;JIAO Dongling;ZHONG Xichun;LIU Zhongwu(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,China)

机构地区：[1]华南理工大学材料科学与工程学院,广州510640

出　　处：《材料研究学报》2022年第1期8-12,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金(51971095);广东省自然科学基金(2020A1515011087)。

摘　　要：分别使用反应溅射Al+α-Al_(2)O_(3)(15%α-Al_(2)O_(3),质量分数)复合靶和在金箔基体表面预植α-Al_(2)O_(3)籽晶,促进α-Al_(2)O_(3)薄膜的低温沉积。使用扫描电子显微镜(SEM)、掠入射X射线衍射(GIXRD)和能谱仪(EDS)等方法表征薄膜样品的表面形貌、相结构和元素组成。结果表明,在射频反应溅射Al+α-Al_(2)O_(3)复合靶、沉积温度为560℃条件下能在Si(100)基体上沉积出化学计量比的单相α-Al_(2)O_(3)薄膜;使用射频反应溅射Al靶、沉积温度为500℃条件下能在预植α-Al_(2)O_(3)籽晶(籽晶密度为106/cm 2)的金箔表面沉积出化学计量比的单相α-Al_(2)O_(3)薄膜。两种研究方案的结果均表明,α-Al_(2)O_(3)籽晶能促进低温沉积单相α-Al_(2)O_(3)薄膜。The films of corundum structure Al_(2)O_(3) were successfully deposited on gold foil with pre-depositedα-Al_(2)O_(3) seeds at low-temperature by reactive RF(Radio Frequency)sputtering with Al+α-Al_(2)O_(3)(15%α-Al_(2)O_(3))target.The surface morphology,phase constituent and chemical composition of the as-de-posited films were characterized by SEM,GIXRD and EDS.Results show that films of singleα-Al_(2)O_(3) with corundum-like crystallographic structure could be deposited at 560℃on Si(100)substrate by reac-tive sputtering with Al+α-Al_(2)O_(3) as composite target,while the substrate temperature even could be re-duced to 500℃for gold foil with pre-depositedα-Al_(2)O_(3) seeds(the density ofα-Al_(2)O_(3) seeds is~106/cm2)by reactive sputtering with pure Al as target.The results of the above two deposition methods proved thatα-Al_(2)O_(3) seeds may be favorable for the deposition of single phaseα-Al_(2)O_(3) films on the substrate at lower temperature.

关 键 词：材料表面与界面 α-Al_(2)O_(3) 薄膜 反应溅射 α籽晶 低温沉积 

分 类 号：TQ174[化学工程—陶瓷工业]