MEMS器件用Cavity-SOI制备中的晶圆键合工艺研究  

Wafer bonding process research in manufacturing of Cavity-SOI for MEMS device application

作　　者：刘福民[1] 杨静 梁德春[1] 吴浩越 马骁 王学锋[1] LIU Fumin;YANG Jing;LIANG Dechun;WU Haoyue;MA Xiao;WANG Xuefeng(Beijing Institute of Aerospace Control Devices,Beijing 100039,China)

机构地区：[1]北京航天控制仪器研究所,北京100039

出　　处：《传感器与微系统》2022年第3期58-61,共4页Transducer and Microsystem Technologies

摘　　要：微机电系统(MEMS)器件用预埋腔体绝缘体上硅(Cavity-SOI)直接键合制备过程中,预埋腔体刻蚀后残余应力导致的衬底层变形会影响绝缘体上硅(SOI)晶圆的面形参数和键合质量。对衬底层残余应力变形与Cavity-SOI键合质量的关系进行了实验研究,分析了衬底片残余应力变形与SOI面形之间的对应关系,用破坏性剪切试验、埋氧层腐蚀等方法研究了衬底层变形对键合质量的影响。结果表明:衬底层的键合面存在一定程度的凸起变形时,Cavity-SOI片的键合质量最好。In process of direct bonding preparation of Cavity-SOI for MEMS device,surface profile and bond quality of a SOI wafer are greatly affected by stress-induced deformations of the substrate layer after cavity etching.Relationship between stress-induced deformations of the substrate and the bonding quality of the Cavity-SOI is studied experimentally,and destructive shear test and buried oxide HF etching are used to study effect of substrate layer deformation on bonding quality,corresponding relationship between SOI surface profile and substrate deformation under residual stress.The results show that the bonding quality of the Cavity-SOI wafer is the best when the bonding surface of the substrate layer has some convex stress-induced deformation.

关 键 词：预埋腔体绝缘体上硅 Si-SiO_(2)直接键合 薄膜应力 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN304.12[自动化与计算机技术—控制科学与工程]