InGaAs/Si键合界面a-Si键合层厚度对InGaAs/Si雪崩光电二极管性能的影响  

Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode

作　　者：佘实现 张烨 黄志伟 周锦荣 柯少颖 SHE Shixian;ZHANG Ye;HUANG Zhiwei;ZHOU Jinrong;KE Shaoying(College of Physics and Information Engineering,Minnan Normal University,Zhangzhou,Fujian 363000,China)

机构地区：[1]闽南师范大学物理与信息工程学院,福建漳州363000

出　　处：《光子学报》2022年第2期170-179,共10页Acta Photonica Sinica

基　　金：国家自然科学基金(No.62004087);福建省自然科学基金(No.2020J01815);漳州市自然科学基金(No.ZZ2020J32)。

摘　　要：为从根本上阻断InGaAs/Si之间的失配晶格,获得低噪声的InGaAs/Si雪崩光电二极管,理论上在InGaAs/Si键合界面插入超薄a-Si键合层,彻底隔断键合界面异质晶格,同时保证InGaAs吸收层和Si倍增层超高的晶体质量和良好的电学传输。模拟了a-Si键合层厚度对InGaAs/Si雪崩光电二极管性能影响。由于a-Si的载流子阻挡作用,器件在室温下获得了超低暗电流,且在偏压大于击穿电压后,光暗电流出现电流间隙,这将为超低噪声InGaAs/Si雪崩光电二极管的研制指明方向。Avalanche Photodiode(APD)is a popular device for the detection of light with low energy.It has been commonly used in LIDAR,quantum communication,deep space application,and remote sensing.In comparison to visible light detection,extending the spectral range of the APD into the short-wave infrared region(especially 1310 nm and 1550 nm)has a number of competitive advantages,such as high atmospheric transmission through smoke,smog,and fog,high compatibility with low-loss fiber communication,enhanced eye-safety threshold for free-space exploration,and low solar radiation background level for single-photon detection.The combination of InGaAs material and Si material is an ideal solution for the fabrication of high-performance APDs for the detection of weak light at communication band due to the fact that the absorption coefficient of InGaAs material is high at near-infrared range and Si material exhibits excellent avalanche characteristic thanks to the low electron/hole ionization coefficient ratio(0.02).However,due to the 7.7%lattice mismatch between InGaAs and Si,high-density threading dislocations form in Si-based epitaxial InGaAs film,leading to the high dark current and high noise in InGaAs/Si APD.While,high-quality Si-based InGaAs film can be achieved by InGaAs/Si hetero wafer bonding and layer exfoliation.The InP-based epitaxial InGaAs thin film is bonded to the Si-based epitaxial Si film by direct bonding method.This is a potential method for the fabrication of high-performance InGaAs/Si APD.However,the reported direct wafer bonding technique still cannot isolate the lattices of InGaAs and Si fundamentally due to the fact that the lattices of InGaAs and Si is directly contacted to each other during bonding,leading to the formation of misfit dislocations at the bonded interface.Thus,the lattices of InGaAs and Si materials should be segregated for the elimination of nucleation of dislocations.Using amorphous semiconductor intermediate layer,the lattice between InGaAs and Si can be isolated thoroughly.In addition,

关 键 词：InGaAs/Si键合 雪崩光电二极管 a-Si键合层 晶格失配 异质键合 

分 类 号：TN315[电子电信—物理电子学]