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作 者:贾娟 姜爱峰[1] 丁慧 李继军[1] 杨诗婷[1] 郎风超[1] JIA Juan;JIANG Ai-feng;DING Hui;LI Ji-jun;YANG Shi-ting;LANG Feng-chao(College of Science,Inner Mongolia University of Technology,Hohhot 010051,China)
机构地区:[1]内蒙古工业大学理学院,内蒙古呼和浩特010051
出 处:《内蒙古民族大学学报(自然科学版)》2022年第1期19-25,共7页Journal of Inner Mongolia Minzu University:Natural Sciences
基 金:国家自然科学基金项目(11562016,12002174);内蒙古自治区自然科学基金项目(2021MS01019,2018MS01013);内蒙古自治区高等学校科研项目(NJZY22383);内蒙古工业大学科研项目(ZY201818);内蒙古工业大学大学生创新实验计划(2020093006)。
摘 要:SiO_(2)薄膜作为集成电路绝缘层、光学薄膜器件以及微机电系统薄膜的重要组成部分,在器件制造中起着重要的作用。为了分析Si基SiO_(2)薄膜的粗糙度,利用原子力显微镜对Si基SiO_(2)薄膜表面进行测试,将得到的表面形貌首先进行平均滤波和图像均衡化处理,再从表面形貌、粒径累积占比、二维傅里叶分析、栅格分析和层次分析等角度分析其粗糙度。结果表明:Si基SiO_(2)薄膜二维与三维表面形貌分布相对平缓,少量突出尖端出现,突出峰的高度为3.20 nm;粗糙度与粒径累积正相关,粒径累积分布变化越集中,越均匀,表面粗糙度越小,其表面平均粒径是3.85 nm;二维傅里叶变换表示薄膜表面梯度变化,暗处较多说明表面梯度较低,粗糙度较小;其表面栅格分布规则,表面粗糙度较小;Si基SiO_(2)薄膜的平均高度为1.36 nm,高度累积占比50%,高度相对较低的表面粗糙度较小。最后得出Si基SiO_(2)薄膜的表面平均粗糙度为0.167 nm。从以上几个角度能够实现对材料表面的粗糙度的测量。为日后研究材料表面的粗糙度具有一定的参考依据。The SiO_(2) film plays an important role in device manufacturing as an important part of integrated circuit insulating layer,optical film device and Micro-Electro-Mechanical System(MEMS)film. In order to analyze the roughness of Si-based SiO_(2) thin film,atomic force microscope was used to test the surface of Si-based SiO_(2) film material. The obtained surface topography was firstly processed by average filtering and image equalization and then its roughness was analyzed from the perspective of two-dimensional(2D)Fourier analysis,grid analysis,surface topography and particle size accumulation ratio. The results show that the distribution of 2D and 3D surface topography of Si-based SiO_(2) films is relatively flat with a small number of protruding tips appearing and the height of the protruding peak is 3.20 nm;The roughness is positively correlated with the cumulative particle size and the more concentrated and uniform the particle size accumulation distribution is,the smaller the surface roughness is and the average particle size of the surface is 3.85 nm;Two-dimensional Fourier transform represents the gradient change on the surface of the film and more dark places indicate lower surface gradient and smaller roughness;Its surface grid distribution is regular and its surface roughness is small;The average height of the Si-based SiO_(2)film is 1.36 nm,which accounts for 50% of the cumulative height. The surface roughness of the relatively low height is smaller. Finally,the average surface roughness of the Si-based SiO_(2) film is 0.167 nm.From the above angles,the measurement of the surface roughness of the material can be achieved. It has a certain reference basis for studying the surface roughness of materials in the future.
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