10kV SiC GTO器件特性研究  

Research on Characteristics of 10kV SiC GTO Device

作　　者：程琳 罗佳敏 龚存昊 张有润[2] 唐毅 门富媛 都小利 CHENG Lin;LUO Jiamin;GONG Cunhao;ZHANG Yourun;TANG Yi;MEN Fuyuan;DU Xiaoli(State Grid Anhui Training Center,Hefei 230022,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]国网安徽省电力有限公司培训中心,合肥230022 [2]电子科技大学电子科学与工程学院,成都611731

出　　处：《电子与封装》2022年第3期12-17,共6页Electronics & Packaging

基　　金：国网安徽省电力有限公司培训中心科技项目(2017QC02)。

摘　　要：基于第三代宽禁带半导体材料4H-SiC的超高压门极可关断晶闸管(Gate Turn-Off Thyristor,GTO)器件,在双向载流子注入和电导调制效应的作用下,器件在耐高压的同时获得高通态电流,在功率密度和可靠性等方面可以满足超大功率应用的要求。考虑到正向阻断电压、正向导通压降和脉冲电路下的开启时间等,提出了10 kV 4H-SiC GTO器件,借助Silvaco TCAD仿真研究了GTO器件的正向导通特性、正向阻断特性、动态开关特性和脉冲放电特性,得出了其正向导通压降为4.605 V,正向阻断电压为14.78 kV,开启时间为55 ns,关断时间为13.3 ns。The ultra-high voltage gate turn-off thyristor(GTO)device based on the third-generation wide-bandgap semiconductor material 4H-SiC is under the effect of bidirectional carrier injection and conductance modulation.It can obtain high on-state current at the same time of high withstand voltage,and meet the requirements of ultra-high power applications in terms of power density and reliability.Considering the forward blocking voltage,forward conduction voltage drop and the turn-on time under the pulse circuit,a 10 kV 4H-SiC GTO device is proposed,with the help of Silvaco TCAD simulation,the forward conduction characteristics,forward blocking characteristics,dynamic switching characteristics and pulse discharge characteristics of GTO devices are studied.It is concluded that the forward voltage drop is 4.605 V,the forward blocking voltage is 14.78 kV,the turn-on time is 55 ns,and the turn-off time is 13.3 ns.

关 键 词：4H-SIC 门极可关断晶闸管 脉冲放电特性 

分 类 号：TN341[电子电信—物理电子学]