基于GaN HEMT工艺的W波段低噪声放大器MMIC  

A W-Band Low Noise Amplifier MMIC Based on GaN HEMT Technology

作　　者：许春良[1] 李明[1] 王雨桐[1] 魏洪涛[1] Xu Chunliang;Li Ming;Wang Yutong;Wei Hongtao(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2022年第3期237-242,共6页Semiconductor Technology

摘　　要：介绍了一款基于GaN高电子迁移率晶体管(HEMT)工艺的W波段GaN低噪声放大器(LNA)单片微波集成电路(MMIC)的研制。该放大器采用5级共源放大结构,栅极和漏极双电源供电,第一级着重优化噪声,后4级着重设计了级间匹配,实现高增益。用电子设计自动化(EDA)软件进行电路设计,并对全版图进行电磁场仿真。测试结果表明,当漏压为+5 V、栅压为-2.3 V时,放大器的静态电流为100 mA。在88~98 GHz频带内,放大器小信号增益大于22 dB,噪声系数小于4.6 dB,输入电压驻波比(VSWR)小于1.55∶1,输出VSWR小于1.65∶1,1 dB压缩点输出功率大于12 dBm。芯片面积为3.99 mm×1.47 mm。该LNA具有带宽宽、增益高、噪声低、输出功率高等特点,可广泛应用于W波段接收前端。The development of a W-band GaN low noise amplifier(LNA) monolithic microwave integrated circuit(MMIC) based on GaN high electron mobility transistor(HEMT) technology was introduced.The LNA was designed with five-stage amplifier in common-source structure,and both gate and drain were biased.The design for the first stage focused on optimizing noise,and for the last four stages focused on designing interstage matching to achieve a high gain.The electronic design automation(EDA) software was used in the circuit design and the full layout electromagnetic field simulation was carried out.The test results show that the quiescent current of the amplifier is 100 mA when the drain voltage is +5 V and the gate voltage is-2.3 V.At 88-98 GHz,the amplifier has a small signal gain higher than 22 dB,noise figure is less than 4.6 dB,the input voltage standing wave ratio(VSWR) is less than 1.55∶1,the output VSWR is less than 1.65∶1,and the output power is more than 12 dBm at 1 dB compression point.The chip area is 3.99 mm×1.47 mm.The LNA has the characteristics of wide band,high gain,low noise and high output power,which can be widely used in W-band receiving front-end.

关 键 词：GaN 高电子迁移率晶体管(HEMT) W波段 低噪声放大器(LNA) 单片微波集成电路(MMIC) 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.3