E波段3.5 W GaN宽带高功率放大器MMIC  

E-band 3.5 W GaN Wideband High Power Amplifier MMIC

作　　者：戈勤 陶洪琪[1,2] 王维波 商德春[1] 刘仁福 袁思昊 GE Qin;TAO Hongqi;WANG Weibo;SHANG Dechun;LIU Renfu;YUAN Sihao(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成与模块电路国家重点实验室,南京210016

出　　处：《固体电子学研究与进展》2022年第1期1-4,共4页Research & Progress of SSE

摘　　要：基于自主开发的100 nm GaN高电子迁移率晶体管(HEMT)工艺,研制了一款工作频段覆盖E波段(60~90 GHz)的宽带高功率放大器芯片。放大器采用密集通孔结构的共源极晶体管,降低寄生效应,提高器件的高频增益。同时采用三级级联拓扑结构,结合紧凑的微带线宽带匹配电路,在60~92 GHz频率范围内,典型线性增益达到10.4 dB,增益平坦度为±1 dB,输入输出回波损耗小于等于-11 dB。通过行波式功率合成网络,在连续波状态下,芯片全频带内饱和输出功率不低于1.7 W。在64 GHz,最高输出功率达到3.5 W,相应功率增益为8.4 dB,功率附加效率为12.6%。Based on a self-developed technology of 100 nm GaN high electron mobility transistor(HEMT),a wideband high power amplifier MMIC covering E-band(60-90 GHz)was demonstrated in this paper. The distributed common source GaN HEMTs with each source directly grounded by back-via hole were used in the amplifier,which helped to reduce the parasitic effects and improve the gain response at high frequency. By employing the compact microstrip wideband matching circuits,the three stage amplifier exhibits a typical linear gain of 10.4 dB with the good gain flatness of ±1 dB in the frequency range of 60-92 GHz.The input and output return losses are less than-11 dB. Meanwhile,with the help of the traveling-wave power combiner network,the MMIC deliversa saturated output power of more than 1.7 W across the full band at C.W. mode. At 64 GHz,the peak output power is 3.5 W with the associated power gain of 8.4 dB and power-added efficiency of 12.6%.

关 键 词：GaNHEMT E波段 宽带 高功率 MMIC 

分 类 号：TN722.7.5[电子电信—电路与系统] TN492