硅基异构集成模块金属互连失效分析  

Failure Analysis of Metal Interconnection of Silicon-based Heterogeneous Integrated Modules

作　　者：宋明宣 林罡[1] 刘鹏飞 张洪泽 SONG Mingxuan;LIN Gang;LIU Pengfei;ZHANG Hongze(Nanjing Electron Device Institution,Nanjing,210008,CHN)

机构地区：[1]南京电子器件研究所,南京210008

出　　处：《固体电子学研究与进展》2022年第1期68-72,共5页Research & Progress of SSE

摘　　要：介绍了硅基三维异构集成模块金属互连失效的一种定位方法。通过分析集成模块的金属互连结构,采用介质层剥离、金刚刀裂片、磨削制样等预处理方法,结合聚焦离子束(FIB)、电子能谱(EDAX)等工具,实现了故障点的有效定位。介绍了三维集成模块金属互连失效的一种失效机理。通过对集成模块生产工艺的分析,以及对实验晶圆进行模拟去胶实验,得到了导致失效的工艺原因。研究结果显示:在去胶工艺中,有机残胶未被完全去除,可能会在两层金属的接触界面,例如双层布线通孔界面、晶圆键合界面,产生阻隔、裂缝、孔洞等异常结构,阻碍电流的纵向传输,导致三维集成产品金属互连系统失效。A locating method of metal interconnection failure of silicon-based three-dimensional heterogeneous integrated module was introduced. According to the metal structure of module,the failure samples are processed by media stripping,splitting and grinding. The fault location is realized by FIB and EDAX. A failure mechanism of metal interconnection failure is introduced. By analyzing the production process of integrated module and simulating the experimental wafer,the process reasons of failure are obtained. The results show that the organic residual glue produced in the degumming process may cause abnormal structures such as metal barrier or crack at the through-hole or wafer bonding interface. The abnormal structure hinders the longitudinal transmission of current and leads to the failure of metal interconnection.

关 键 词：异构集成 失效分析 双层布线 晶圆键合 

分 类 号：TN406[电子电信—微电子学与固体电子学]