特大功率晶闸管结终端技术对阻断电压的影响  

Influence of Junction Termination Technology of Ultra-high Power Thyristor on Blocking Voltage

作　　者：陈黄鹂 王红梅 程炯 张刚琦 CHEN Huang-li;WANG Hong-mei;CHENG Jiong;ZHANG Gang-qi(Xi’an PERI Power Semiconductor Converting Technology Co.,Ltd.,Xi'an 710077,China;不详)

机构地区：[1]西安派瑞功率半导体变流技术股份有限公司,陕西西安710077 [2]国网四川省电力公司检修公司,四川成都610041

出　　处：《电力电子技术》2022年第3期130-132,共3页Power Electronics

基　　金：国家电网有限公司总部科技项目(521999200020)。

摘　　要：在此通过计算机仿真方法对影响特大功率晶闸管阻断电压的结终端技术进行仿真分析,并对仿真结论进行试验验证,证实了具有双负斜角结构的特大功率晶闸管,其结终端技术的负斜角角度和造型深度对结终端空间电荷区的扩展和电场分布有重要影响,从而影响阻断电压。只有负斜角角度和造型深度都在优化值时,才能获得兼具高可靠性和高稳定性的晶闸管最高阻断电压。The junction termination technology which affects the blocking voltage of ultra-high power thyristor is simulated and analyzed by computer simulation method,and the simulation conclusion is verified by experiments.It is proved that the negative bevel angle and modeling depth of the junction termination technology have an important influence on the expansion of the space-charge region and electric field distribution of the junction terminal,thus affecting the blocking voltage.The highest blocking voltage of thyristor with high reliability and stability can be obtained only when the negative bevel angle and modeling depth are in the optimal values.

关 键 词：特大功率晶闸管 结终端技术 阻断电压 

分 类 号：TN34[电子电信—物理电子学]