一种25 Gbit/s背入射高速InAlAs雪崩光电二极管  

25 Gbit/s Back-Side Illuminated High Speed InAlAs Avalanche Photodiode

作　　者：黄晓峰[1] 陈伟[1] 董绪丰[1] 敖天宏 王立 唐艳 张圆圆 罗鸣 HUANG Xiaofeng;CHEN Wei;DONG Xufeng;AO Tianhong;WANG Li;TANG Yan;ZHANG Yuanyuan;LUO Ming(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2022年第1期122-125,共4页Semiconductor Optoelectronics

摘　　要：设计并制备了一种面向25 Gbit/s长距离传输用背面进光高速InAlAs雪崩光电二极管(APD),芯片采用垂直台面吸收-渐变-电荷-倍增层分离(SAGCM)结构,通过刻蚀工艺形成三层台面,将电场限制在最大台面倍增层的中心,有效降低了台面边缘击穿风险。器件采用倒装焊结构,背面集成微透镜,以提高光耦合孔径。研制的APD芯片在增益M=1时,对1310 nm波长光的响应度为0.84 A/W;在M=10时,3 dB带宽达到19 GHz;增益带宽积为180 GHz;在5×10^(-5)误码率下最佳灵敏度为-22.3 dBm,可支持100GBASE-ER4通信标准。A high-speed back illuminating InAlAs avalanche photodiode(APD)was developed to meet the requirements of single-channel 25 Gbit/s long-distance transmission.The APD adopts vertical back-illumination separate-absorption-grading-charging-multiplication(SAGCM)structure.Triple-layer mesa was formed by etching process,and the electric field was limited to the center of the maximum mesa multiplier layer,effectively reducing the mesa edge breakdown.The chip adopts reverse welding structure with integrated microlens on the back to improve optical coupling aperture.The responsivity of the developed APD chip is 0.84 A/W(λ=1310 nm)at the gain of M=1.When M=10,3 dB bandwidth reaches 19 GHz.The gain-bandwidth product is 180 GHz.The best sensitivity at 5×10^(-5)bit error rate is-22.3 dBm,which can support 100 GBASE-ER4 communication standard.

关 键 词：25 Gbit/s 雪崩光电二极管 INALAS SAGCM 微透镜 100GBASE-ER4 

分 类 号：TN312.7[电子电信—物理电子学]