多晶硅电阻线性度补偿方法研究  

Study on Compensation Method for Polysilicon Resistance Linearity

作　　者：杨洋 雷郎成 高炜祺 胡永菲 刘虹宏 付东兵 YANG Yang;LEI Langcheng;GAO Weiqi;HU Yongfei;LIU Honghong;FU Dongbing(Chongqing Gigachip Technology Co.,Ltd.,Chongqing 401332,P.R.China)

机构地区：[1]重庆吉芯科技有限公司,重庆401332

出　　处：《微电子学》2022年第1期33-37,共5页Microelectronics

摘　　要：介绍了多晶硅电阻非线性度对信号链整体电路性能的影响,分析了多晶硅电阻非线性产生的原因。提出了衬底电位补偿和组合多晶补偿两种非线性补偿设计方法。采用仿真和测试,对比了未经补偿、新补偿方法的12位D/A转换器的性能。结果表明,经过多晶硅电阻补偿和非线性补偿后的D/A转换器达到了更优的线性度。The influence of the nonlinearity of polysilicon silicon resistance on the overall circuit performance of signal chain was introduced, and the causes of the nonlinearity of polycrystalline silicon resistance were analyzed. Two nonlinear compensation design methods, substrate potential compensation and composite polysilicon compensation, were proposed. The performance of 12 bit D/A converter without compensation and with the new compensation method were compared by simulation and test. The results showed that the D/A converter with polycrystalline silicon resistance compensation and nonlinear compensation achieved better linearity.

关 键 词：多晶硅电阻 非线性补偿 自热效应 D/A转换器 

分 类 号：TN792[电子电信—电路与系统]