SiC器件在卫星电源系统中的应用与分析  

Applicationsand Challenges of SiC Devices in Satellite Electrical Power Systems

作　　者：康庆[1] 李峰[1] 邢杰[1] 章玄 KANG Qing;LI Feng;XING Jie;ZHANG Xuan(China Institute of Telecommunication of Satellite,Chinese Academy of Space Technology,Beijing 100094,China)

机构地区：[1]中国空间技术研究院通信卫星事业部,北京100094

出　　处：《电源学报》2022年第2期154-160,共7页Journal of Power Supply

基　　金：国家核高基重大专项“核心电子器件在DFH-5系列卫星中的验证与应用”项目(2017ZX01013102-003)。

摘　　要：SiC器件作为宽禁带半导体器件代表,具有高击穿场强、高饱和电子漂移速率、高热导率、高电压、高频率和高抗辐照等优越的物理和电气特性,在卫星电源系统中具有巨大的应用潜力。介绍了卫星电源系统发展的现状与趋势,论述了当前国际宇航研究机构对SiC功率器件在卫星电推进系统中应用的研究,并提出SiC器件在卫星中应用的单粒子需求趋势。分析认为SiC功率器件今后的研究重点在于单粒子失效机理的研究、辐照加固工艺完善以及器件改进。As a typical wide-band gap semiconductor device,silicon carbide(SiC)device hasobvious advantages inits physical and electrical performance,such as high breakdown voltage,high electron drift velocity,high thermal conductivity,high voltage,high frequency and high anti-radiation,leading toits giant application potential in satellite electrical power systems(EPSs).In this paper,the current status and trends of satellite EPS developmentare introduced,and the demand for Si C devices is put forward.The research on the applications of SiC power devices in satellite electric propulsion systems designed by international space agencies is reviewed,and the challenge of single event effect(SEE)is proposed.Finally,it is concluded that the future research of SiC power devices should focus on the study of SEE failure mechanism,radiation enhancement process and device improvement.

关 键 词：SIC 卫星 高电压 电推进 单粒子效应 

分 类 号：TM492[电气工程—电器]