功率半导体器件栅氧化层状态监测方法综述与展望  

Review and prospect for condition monitoring method of power semiconductor devices gate oxide

作　　者：何怡刚[1] 孙豪 袁伟博 张学勤 He Yigang;Sun Hao;Yuan Weibo;Zhang Xueqin(School of Electrical Engineering and Automation,Hefei University of Technology,Hefei 230000,China)

机构地区：[1]合肥工业大学电气与自动化工程学院,合肥230000

出　　处：《电子测量与仪器学报》2021年第11期1-11,共11页Journal of Electronic Measurement and Instrumentation

基　　金：国家自然科学基金(51977153,51977161,51577046);国家自然科学基金重点项目(51637004);国家重点研发计划“重大科学仪器设备开发”项目(2016YFF0102200);装备预先研究重点项目(41402040301)资助。

摘　　要：功率半导体器件栅极氧化层退化对功率器件的正常运行产生严重影响,不同偏置应力导致栅氧化层退化形式不同,故栅氧化层的状态监测研究对确保功率器件的高可靠性具有重要意义。从栅氧化层退化的微观机理出发,建立相关特征参数与栅氧化层退化的精确函数关系,在栅氧化层退化的情况下对特征参数漂移量进行检测可以实现对功率器件栅氧化层的状态监测。围绕退化特征参数和退化模型方面的国内外研究,分类讨论基于阈值电压、米勒效应参数等状态监测方法的最新进展,并着重对栅氧化层状态监测方法的性能进行分析和对比。在此基础上,结合功率器件发展和应用趋势,展望了功率半导体器件栅氧化层状态监测的研究方向。The degradation of the power semiconductor gate oxide layer has a serious impact on its normal operation.Different bias stress lead to different forms of gate oxide degradation.Therefore,the condition monitoring research of the gate oxide layer is of great significance to power semiconductor’s high reliability.Starting from the microscopic mechanism of gate oxide degradation,establishing an accurate function relationship between related characteristic parameters and gate oxide degradation.When the gate oxide layer is degraded,the drift of the characteristic parameters can be detected to realize the condition monitoring of the power semiconductor gate oxide layer.Focusing on the domestic and foreign research on degradation characteristic parameters and degradation models,the latest progress on condition monitoring methods based on threshold voltage and Miller effect parameters are discussed in classification,and the performance of gate oxide condition monitoring methods are analyzed and compared.On this basis,combined with the development and application trends of power semiconductor,the research direction of gate oxide condition monitoring of power semiconductor devices is prospected.

关 键 词：功率半导体器件 MOSFET IGBT 栅氧化层 米勒效应 状态监测 

分 类 号：TN386[电子电信—物理电子学] TM23[一般工业技术—材料科学与工程]