一种新型VDMOS器件结构的设计与实现  

Design and realization of a new VDMOS device structure

作　　者：董子旭 王万礼 赵晓丽 张馨予 刘晓芳 DONG Zixu;WANG Wanli;ZHAO Xiaoli;ZHANG Xinyu;LIU Xiaofang(The School of Electronics and Information Engineering,TianGong University,Tianjin 300384,China;Tianjin HUANXIN Science and Technology Development Co.,Ltd.,Tianjin 300384,China)

机构地区：[1]天津工业大学电子与信息工程学院,天津300384 [2]天津环鑫科技发展有限公司,天津300384

出　　处：《太赫兹科学与电子信息学报》2022年第4期402-406,共5页Journal of Terahertz Science and Electronic Information Technology

摘　　要：垂直双扩散金属-氧化物半导体场效应晶体管(VDMOS)器件是一种以多子为载流子的器件,具有开关速度快、开关损耗小、输入阻抗高、工作频率高以及热稳定性好等特点。提出一款60 V平面栅VDMOS器件的设计与制造方法,开发出一种新结构方案,通过减少一层终端层版图的光刻,将终端结构与有源区结构结合在一张光刻版上,并在终端工艺中设计了一种改善终端耐压的钝化结构,通过使用聚酰亚胺光刻胶(PI)钝化工艺代替传统的氮化硅钝化层。测试结果表明产品满足设计要求,以期为其他规格的芯片设计提供一种新的设计思路。The Vertical Double-diffused Metal Oxide Semiconductor(VDMOS)device is one that uses multiple carriers,which bears the characteristics of fast switching speed,small switching loss,high input impedance,high operating frequency and good thermal stability.This paper proposes a design and manufacturing method of a 60 V planar gate VDMOS device.In the process of device design,a new structural scheme is proposed.By reducing the lithography of a terminal ring layer(Guard Ring Layer),the terminal structure and the active area structure are combined on one lithography.And a new passivation structure is designed to improve the terminal voltage in the terminal process.The Polyimide(PI)passivation process is utilized instead of the traditional nitride silicon passivation layer.The test results show that the product meets the design requirements.The design scheme of the new structure proposed in this paper is intended to provide a new design idea for the chip design of other specifications.

关 键 词：功率器件 垂直双扩散金属-氧化物半导体场效应晶体管(VDMOS) 终端结构 击穿电压 钝化工艺 

分 类 号：TN820[电子电信—信息与通信工程]