基于峰值谱技术的GaN基微波功率器件陷阱表征方法  

Trap Characterization Method for GaN-Based Microwave Power Devices Based on Peak Spectrum Technology

作　　者：张娇[1] 张亚民[1] 冯士维[1] Zhang Jiao;Zhang Yamin;Feng Shiwei(School of Microelectronics,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学微电子学院,北京100124

出　　处：《半导体技术》2022年第4期274-280,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804006,62074009);北京市自然科学基金资助项目(4192012);北京市教委科技计划一般项目(KM202010005033)。

摘　　要：GaN基微波功率器件在高电场影响下产生了界面缺陷和陷阱效应,加剧了器件有源区材料的损伤,是造成其在高频、大功率应用下电学参数退化的重要因素。提出了一种基于贝叶斯迭代的时间常数谱的提取方法,通过采集器件漏源电流瞬态响应曲线,精确提取陷阱俘获、释放电子的时间常数。利用阿伦尼乌斯方程计算陷阱和缺陷的激活能,并通过施加不同的电偏置实现了器件纵向结构各材料层中陷阱和缺陷的特性表征。通过实验表征了处于GaN缓冲层和AlGaN势垒层的陷阱特性,发现存在3个不同作用时间常数的陷阱,一个位于AlGaN势垒层,陷阱激活能为0.6 eV;另一个位于GaN缓冲层,陷阱激活能为0.46 eV;第三个位于AlGaN势垒层,陷阱作用的时间常数与温度无关。Under the influence of the high electric field,GaN-based microwave power devices have interface defects and trap effects which aggravate the damage of materials in the active region of the devices and are important factors for the degradation of electrical parameters in high-frequency and high-power applications.A time constant spectrum extraction method based on Bayesian iteration was proposed,and the time constants of traps capturing and releasing electrons were accurately extracted by collecting the transient response curve of the drain-source current of the device.The activation energies of traps and defects were calculated by Arrhenius equation,and the characteristics of traps and defects in each material layer in the longitudinal structure of the device were characterized by applying different electrical bias.The trap characteristics in GaN buffer layer and AlGaN barrier layer were characterized by experiments.It is found that there are three traps with different action time constants.The first one is in the AlGaN barrier layer,and the trap activation energy is 0.6 eV.The second one is in the GaN buffer layer,and the trap activation energy is 0.46 eV.The third one is in the AlGaN barrier layer,and the time constant of the trap action is independent of temperature.

关 键 词：GAN基HEMT 陷阱表征 瞬态电流法 时间常数谱 贝叶斯迭代 

分 类 号：TN386.3[电子电信—物理电子学] TN323.4