28nm MOSFET器件的单粒子效应  

Single Event Effect of 28nm MOSFET Device

作　　者：张龙涛 曹艳荣 任晨 马毛旦 吕航航 吕玲 郑雪峰 马晓华 ZHANG Longtao;CAO Yanrong;REN Chen;MA Maodan;LYU Hanghang;LYU Ling;ZHENG Xuefeng;MA Xiaohua(School of Mechano-Electronic Engineering,Xidian University,Xi’an 710071,China;State Key Discipline Laboratory of Wide Band gap Semiconductor Technology,Xi’an 710071,China)

机构地区：[1]西安电子科技大学机电工程学院,西安710071 [2]宽禁带半导体技术国家重点学科实验室,西安710071

出　　处：《现代应用物理》2022年第1期116-124,共9页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11690042,U1866212,12035019,61727804,11690040)。

摘　　要：利用SILVACO TCAD软件构建了28 nm MOSFET器件的3维结构,创建了单粒子的迁移率和载流子等仿真物理模型,仿真模拟了重离子入射位置、LET值、入射角度及器件的漏极掺杂浓度、漏极偏置电压对28 nm MOSFET器件单粒子效应的影响,分析了重离子入射引起器件双极放大效应。仿真结果表明:MOSFET器件对单粒子效应敏感的位置是临近轻掺杂的漏极,通过提取耗尽区电势,发现不同位置单粒子漏极瞬态电流的峰值与电势的大小基本保持一致;漏极瞬态电流峰值随着LET值和漏极偏置电压的增大而增大,而随着器件的漏极掺杂浓度的增大而减小;漏极瞬态电流峰值随着粒子入射角度的增大而增大,这是器件内部电离面积的变化引起的。另外,单粒子效应会导致MOSFET体内的寄生晶体管导通,使大量电子从源极流入漏极,产生的电流与单粒子电离形成的电流叠加使电路节点电压突变,导致电路功能紊乱,研究表明双极放大增益可达3.3。In this paper,three-dimensional structure of 28 nm MOSFET device is constructed by using SILVACO TCAD software,and the simulation physical models of single particle mobility and carrier are created.The single particle effects of incident position of heavy ion,LET value,incident angle of heavy ion,drain doping concentration of device,and drain bias voltages on 28 nm MOSFET device are simulated,and the bipolar amplification effect caused by heavy ion incident is analyzed.The simulation results show that the position where MOSFET is sensitive to single event effect is near the light doped drain(LDD).By extracting the potential in the depletion region,it is found that the peak value of single event transient current at different positions is basically consistent with the potential.The single particle transient current increases with the increase of LET value and drain bias voltage,and decreases with the increase of drain doping concentration.The single event effect will lead to the conduction of parasitic transistors in MOSFET,so that a large number of electrons flow from the source to the drain.The generated current and single event ionization form a current superposition,which makes the circuit node voltage sudden change and leads to the disorder of circuit function.The research shows that the bipolar amplification gain can reach 3.3.

关 键 词：MOSFET 单粒子效应 TCAD仿真 瞬态电流 双极放大增益 

分 类 号：TN386[电子电信—物理电子学] TL99[核科学技术—核技术及应用]