30nm PMOS器件总剂量辐照实验与仿真  

Total Dose Radiation Experiment and SimulationVerification for 30nm PMOS Devices

作　　者：张宏涛 曹艳荣 王敏 任晨 张龙涛 吕玲 郑雪峰 马晓华 ZHANG Hongtao;CAO Yanrong;WANG Min;REN Chen;ZHANG Longtao;LYU Ling;ZHENG Xuefeng;MA Xiaohua(School of Mechano-Electronic Engineering,Xidian University;State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology:Xi’an 710071,China)

机构地区：[1]西安电子科技大学机电工程学院,西安710071 [2]宽禁带半导体技术国家重点学科实验室,西安710071

出　　处：《现代应用物理》2022年第1期125-128,179,共5页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11690042,11690040,U1866212,12035019,61727804);北京智芯微电子技术有限公司实验室开放基金,科学挑战计划资助项目(TZ2018004)。

摘　　要：使用Silvaco TCAD软件建立PMOS器件模型,仿真模拟得到了PMOS器件γ射线总剂量效应,提取了氧化层及界面处陷阱电荷共同影响后器件的电学参数并验证了退化程度。仿真结果表明,PMOS器件沟道越短,有效沟道长度占比总沟道长度就越少,器件退化加剧。开展了宽长比为500 nm/30 nm的30 nm PMOS器件的总剂量效应实验。实验表明,γ射线的持续辐照会使器件发生退化,阈值电压负向漂移,亚阈摆幅变化量增大。仿真结果与实验数据均表明,浅沟槽隔离氧化层陷阱电荷是造成器件退化的主要影响因素。This paper uses Silvaco TCAD software to establish the PMOS device model,obtain the data after the device is jointly affected by the oxide layer and the trap charge at the interface,extract the electrical parameters and verify its degradation level.The main factor of degradation caused by the total dose effect in nanoscale devices is the influence of trapped charge in the shallow channel isolation region.The total dose effect experiments focused on 30 nm PMOS devices with device size of 500 nm/30 nm.The experiments show that the continuous exposure toγrays will degrade the device,make the negative drift of threshold voltage,and increase the sub-threshold swing.The simulation results and experimental data show that the trapped charge of shallow trench isolated oxide layer is the main factor causing device degradation.

关 键 词：PMOS器件 总剂量效应 可靠性 Silvaco TCAD 

分 类 号：TN386[电子电信—物理电子学] TL99[核科学技术—核技术及应用]