一种具有高击穿电压和低导通电阻的新型鳍状栅极LDMOS  

A Novel Fin-Shapped Gate LDMOS with High BV and Low R

作　　者：蒋志林 王旭锋 于平平 姜岩峰 JIANG Zhilin;WANG Xufeng;YU Pingping;JIANG Yanfeng(Engineering Research Center qf IoT Technology Applications(Ministry of Education),Department qf Electronic Engineering,Jiangnan University,Wuxi Jiangsu 214122,China)

机构地区：[1]江南大学电子工程系,物联网技术应用教育部工程研究中心,江苏无锡214122

出　　处：《电子器件》2022年第1期7-12,共6页Chinese Journal of Electron Devices

基　　金：国家自然科学基金委员会项目(61774078,51802124);江苏省自然科学基金项目(BK 20180626)。

摘　　要：设计了一种具有新型鳍状栅极结构的LDMOS功率开关器件(FG-LDMOS),该器件在导电沟道处纵向刻蚀一组浅沟槽,再经热氧化后填充作为场板的多晶硅。鳍状栅极结构在不改变器件尺寸情况下,增大了沟道的有效宽度,增强了场板效应。通过Silvaco TCAD仿真验证,结果表明FG-LDMOS较传统LDMOS具有更好的电学特性,如击穿电压提高了25%达到100 V,比导通电阻R_(on.sp)降低了25%至2.68 mΩ/cm^(2),品质因数FOM提高了94.5%到3.58 MW/cm^(2)。此外该FG-LDMOS拥有优异的高频开关特性,其栅漏电容C_(GD)降到了0.46×10^(-16) F/μm,跨导gm升至0.26 mS。An LDMOS power switching device(FG-LDMOS)with a novel fin-shaped gate structure is designed. The device etches a set of shallow trenches longitudinally at the conductive channel, and then fills with polysilicon as a field plate after thermal oxidation. The fin-shaped gate structure increases the effective width of the channel and enhances the field plate effect without changing size of the device.Through Silvaco TCAD simulation verification, the results show that FG-LDMOS has better electrical characteristics than conventional LDMOS. For example, the breakdown voltage is increased by 25% to 100 V,and the on-resistance R_(on.sp) is reduced by 25% to 2.68 mΩ/cm^(2). The quality factor FOM is increased by 94.5% to 3.58 MW/cm^(2). In addition, the FG-LDMOS has excellent high-frequency switching characteristics, the gate-drain capacitance C_(GD) is reduced to 0.46×10^(-16)F/μm, and the transconductance g_(m) is increased to 0.26 mS.

关 键 词：鳍状栅极 击穿电压 比导通电阻 Silvaco TCAD 

分 类 号：TN305[电子电信—物理电子学]