γ射线辐照对探测器的SiO_(2)-Si_(3)N_(4)复合栅界面和暗电流的影响  

Study on Influence of γ Irradiation on SiO_(2)-Si_(3)N_(4) Dielectric Film and Dark Current of Detector

作　　者：曾武贤[1] 钟玉杰[1] ZENG Wuxian;ZHONG Yujie(Chongqing Photoelectric Technology Research Institute,Chongqing 400060,China)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《集成电路应用》2022年第4期4-7,共4页Application of IC

摘　　要：分析表明,利用γ射线对SiO_(2)-Si_(3)N_(4)复合栅进行辐照,通过C-V曲线测试发现,经过γ射线辐照,C-V曲线向负方向漂移,C-V曲线整体抬高,平带电压向负方向漂移,界面态增大。辐照后CCD器件的暗电流变大,通过γ射线辐照对CCD的Si-SiO_(2)界面产生损伤的机理分析,发现辐照后器件暗电流的增加主要是辐照后栅氧化层中产生的感生界面态电荷和场氧化层中产生大量的复合中心引起。辐照后CCD暗电流的变化和SiO_(2)-Si_(3)N_(4)复合栅界面的变化原因相同,SiO_(2)-Si_(3)N_(4)复合栅界面的变化导致了CCD暗电流发生了变化。Usingγirradiation on the SiO_(2)-Si_(3)N_(4) Dielectric Film by the C-V measuremet,it was found the C-V curve run up and excursion,the interface-trap largen.The dark current of CCD largen,by the analysis of the damnification of the Si-SiO_(2)Dielectric Film,we found that the interface state in gate oxide and the trap center in filed oxide after irradiation induced dark current increased in device.The causation of the change of the dark current of the CCD and SiO_(2)-Si_(3)N_(4) Dielectric Film is uniform.

关 键 词：集成电路 Γ射线 Si-SiO_(2)界面 CCD 辐射损伤 

分 类 号：TN402[电子电信—微电子学与固体电子学]