背栅偏置对不同沟道长度PDSOI晶体管总剂量损伤规律及机理研究  

Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias

作　　者：王海洋 郑齐文[1] 崔江维[1] 李豫东[1] 郭旗[1] WANG Haiyang;ZHENG Qiwen;CUI Jiangwei;LI Yudong;GUO Qi(Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics and Chemistry of Chinese Academy of Sciences,Urumqi 830011,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [2]中国科学院大学,北京100049

出　　处：《核技术》2022年第5期49-54,共6页Nuclear Techniques

基　　金：新疆维吾尔自治区自然科学基金项目(No.2021D01E06);国家自然科学基金(No.12075313);中国科学院青年创新促进会(No.2020430、No.2018473)资助。

摘　　要：为研究辐照过程中施加背栅偏置对不同沟道长度部分耗尽绝缘体上硅金属氧化物半导体场效应晶体管(Partily Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistors,PD SOI MOSFETs)电参数影响规律,及对隐埋氧化层(Buried Oxide,BOX)辐射感生陷阱电荷的调控规律及机理。基于晶体管转移特性曲线,通过提取辐射诱导晶体管阈值电压变化量,对比了不同沟道长度PD SOI在不同背栅偏置条件下的辐射损伤数据,试验结果显示:辐照过程中施加背栅偏置可以显著增强长沟晶体管的损伤。通过提取辐射在BOX层中引入陷阱电荷密度,结合TCAD(Technology Computer Aided Design)器件模拟仿真进行了机理研究,研究结果表明:短沟道晶体管在施加背栅偏置时会受到源漏电压的影响,从而使BOX层中电场分布及强度不同于长沟道晶体管,而长沟道晶体管受源漏电压的影响可以忽略。[Background]Total dose effect of silicon-on-insulator(SOI)devices can be reinforced through the back gate port,hence the device parameter degradation caused by irradiation can be compensated by applying back-gate bias voltage using the positive back gate coupling effect.However,previous studies have focused more on the effects of back-gate bias voltage applied after irradiation on radiation damage,and rarely involved the regulation of back gate bias voltage applied during irradiation on the physical process of radiation introduced into the trap charge. [Purpose] This study aims to investigate the regulation and mechanism of the back gate bias on the buried oxide (BOX) radiation-induced trap charge. [Methods] Based on the transistor transfer characteristic curve, the radiation damage laws of partially depleted silicon-on-insulator (PD SOI) metal oxide semiconductor field effect transistors (MOSFETs) of different sizes under different back gate biases were tested by extracting the trap charge density in the BOX layer. TCAD (Technology Computer Aided Design) device simulation was performed to investigate the mechanism of radiation damage. [Results] The test results show that the damage of long channel transistors is significantly enhanced by applying back-gate bias during the irradiation process. When the back-gate bias is applied to short channel transistor, the distribution and intensity of electric field in BOX layer are different from that of long channel transistor, hence is affected by the source drain voltage whilst the influence of source drain voltage on long channel transistor can be ignored. [Conclusions] Back gate bias and source drain voltage jointly affect the distribution and intensity of electric field in BOX layer of PD SOI MOSFETs, and the damage of long channel transistors is significantly enhanced by applying back-gate bias during the irradiation process.

关 键 词：绝缘体上硅 隐埋氧化层 背栅调控 总剂量辐照 

分 类 号：TL99[核科学技术—核技术及应用]