单层二硫化钼的制备及在器件应用方面的研究  

Cotrollable growth of monolayer MoS_(2) films and their applications in devices

作　　者：李璐 张养坤 时东霞[1,2,3] 张广宇 Li Lu;Zhang Yang-Kun;Shi Dong-Xia;Zhang Guang-Yu(CAS Key Laboratory of Nanoscale Physics and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Key Laboratory for Nanomaterials and Nanodevices,Beijing 100190,China;Collaborative Innovation Center of Quantum Matter,Beijing 100190,China)

机构地区：[1]中国科学院物理研究所,北京凝聚态物理国家研究中心,中国科学院纳米物理与器件重点实验室,北京100190 [2]中国科学院大学物理科学学院,北京100049 [3]纳米材料与器件物理北京市重点实验室,北京100190 [4]量子物质科学协同创新中心,北京100190

出　　处：《物理学报》2022年第10期326-351,共26页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61734001,61888102,11834017);中国科学院战略性先导科技专项(B类)(批准号:XDB30000000)资助的课题。

摘　　要：二硫化钼(MoS_(2))作为一种新兴的二维半导体材料,它具有天然原子级的厚度以及优异的光电特性和机械性能,在未来超大规模集成电路中具有巨大的应用潜力.本文综述了我们课题组在过去几年中在单层MoS_(2)薄膜研究方面所取得的进展,具体包括:在MoS_(2)薄膜制备方面,通过氧辅助气相沉积方法,实现了大尺寸MoS_(2)单晶的可控生长;通过独特的多源立式生长方法,实现了4 in晶圆级大晶粒高定向的单层MoS_(2)薄膜的外延生长,样品显示出极高的光学和电学质量,是目前国际上报道的质量最好的晶圆级MoS_(2)样品;通过调节MoS_(2)薄膜的氧掺杂浓度,可以实现对其电学和光学特性的有效调控.在MoS_(2)薄膜器件与应用方面,利用制备的高质量单层MoS_(2)薄膜,实现了高性能柔性晶体管的集成,这种大面积柔性逻辑和存储器件显示出优异的电学性能;在集成多层场效应晶体管的基础上,设计,加工了垂直集成的多层全二维材料的多功能器件,充分发挥器件的组合性能,实现了“感-存-算”的一体化;制备了全二维材料浮栅存储器,实现了功耗低,可靠性好,且高度对称和线性度可调的突触权重输出的人工突触器件;通过引入结构域边界提高MoS_(2)基地面的电催化析氢反应(HER)催化活性等.我们在MoS_(2)薄膜的制备以及器件特性方面所取得的进展对于MoS_(2)的基础和应用研究均具有指导意义.Monolayer molybdenum disulfide(MoS_(2)) is an emerging two-dimensional(2D) semiconductor material.The MoS_(2)film has a natural atomic-level thickness,excellent optoelectronic and mechanical properties,and it also has the potential applications in very large-scale integration technology in the future.In this article we summarize the research progress made by our group in the studying of monolayer MoS_(2)films in the past few years.The controlled growth of large-size MoS_(2)single crystals is achieved by oxygen-assisted chemical vapor deposition method.By a unique facile multisource CVD growth method,the highly oriented and large domain size ML MoS_(2)films are epitaxially grown on a 4-inch wafer scale.Almost only 0° and 60° oriented domains are present in films,and the average size of MoS_(2)grains ranges from 100 μm to 180 μm.The samples exhibit their best optical and electrical quality ever obtained,as evidenced from their wafer-scale homogeneity,nearly perfect lattice structure,average room-temperature device mobility of ~70 cm~2·V;·s;and high on/off ratio of ~109 on SiO;substrates.By adjusting the oxygen doping concentration in the MoS_(2)film through using an effective CVD technique,electrical and optical properties can be well modified,thereby greatly improving the carrier mobilities and controllable n-type electronic doping effects resulting from optimized oxygen doping levels of MoS_(2)O;.In terms of MoS_(2)thin film devices and applications,the 4-inch wafer-scale high-quality MoS_(2)monolayers are used to fabricate the transparent MoS_(2)-based transistors and logic circuits on flexible substrates.This large-area flexible FET device shows excellent electrical performance with a high device density(1,518 transistors per cm~2)and yield(97%),and exhibits a high on/off ratio(10;),current density(~35 μA·μm;),mobility(~55 cm~2·V;·s;)and flexibility.Based on the vertically integrated multilayer device via a layer-by-layer stacking process,an individual layer of all-2D multifunctional FET is successfu

关 键 词：单层MoS_(2) 化学气相沉积 生长调控 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学] TQ136.12[化学工程—无机化工]